Hamamatsu Photonics

Hamamatsu Photonics Products

Hamamatsu Devices & units

Hamamatsu Optical sensors

Hamamatsu Optical components

Hamamatsu Cameras, Light & radiation sources

Hamamatsu Lasers

Hamamatsu Systems

Manufacturing support systems

Semiconductor manufacturing support systems

Photometry systems

Life science & medical systems

Hamamatsu Photodiodes

Our photodiodes cover a broad spectral range, from near-infrared and ultraviolet wavelengths to high-energy regions. Photodiodes are available in metal, ceramic, and plastic packages, as well as module types. Custom designs are also available.

Hamamatsu Si photodiodes

Silicon photodiodes with high sensitivity and low dark current, as well as silicon PIN photodiodes suitable for high-speed applications.

Manufacturer	Products Name	Type	Photosensitive area	Spectral Response Range	Photosensitive (Typ)	Dark Current (Max)	Rise Time (Typ)	Cutıff frequency (Typ)	Terminal capacitance (typ)
Hamamatsu	Hamamatsu Si photodiode S12497	PWB with pins	9.5 × 9.5 mm	400 to 1100 nm	0.57 A/W	200 pA	15 μs	--	950 pF
Hamamatsu	Si photodiode S12498	PWB with pins	6.0 × 6.0 mm	400 to 1100 nm	0.57 A/W	150 pA	15 μs	--	380 pF
Hamamatsu	Si photodiode S12698-04	For UV to near IR: IR sensitivity suppressed type	3.6 × 3.6 mm	190 to 1000 nm	0.38 A/W	50 pA	0.6 μs	--	240 pF
Hamamatsu	Si photodiode S12915-1010R	For visible to near IR	10 × 10 mm	340 to 1100 nm	0.64 A/W	200 pA	--	--	13000 pF
Hamamatsu	Si photodiode S12915-16R	For visible to near IR	1.1 × 5.9 mm	340 to 1100 nm	0.64 A/W	5 pA	1.8 μs	--	740 pF
Hamamatsu	Si photodiode S12915-33R	For visible to near IR	2.4 × 2.4 mm	340 to 1100 nm	0.64 A/W	5 pA	1.6 μs	--	680 pF
Hamamatsu	Si photodiode S12915-66R	For visible to near IR	5.8 × 5.8 mm	340 to 1100 nm	0.64 A/W	50 pA	9 μs	--	4000 pF
Hamamatsu	Si photodiode S13954-01CT	For automotive	φ1.5 mm	320 to 1000 nm	0.49 A/W	1000 pA	--	230 MHz	13 pF
Hamamatsu	Si PIN photodiode S13993	for direct radiation detection	10 × 10 mm	--	--	6000 pA	--	40 MHz	40 pF
Hamamatsu	Si photodiode S14016-01DT	Cut-off frequency: 10 MHz to less than 100 MHz	1.8 × 2.1 mm	320 to 1100 nm	0.7 A/W	10000 pA	--	10 MHz	12 pF
Hamamatsu	Si PIN photodiode S14536-320	for high-energy particles	48 × 48 mm	--	--	100000 pA	--	3 MHz	--
Hamamatsu	Si PIN photodiode S14536-500	for high-energy particles	48 × 48 mm	--	--	200000 pA	--	5 MHz	--
Hamamatsu	Si PIN photodiode S14537-320	for high-energy particles	28 × 28 mm	--	--	50000 pA	--	8 MHz	--
Hamamatsu	Si PIN photodiode S14537-500	for high-energy particles	28 × 28 mm	--	--	100000 pA	--	10 MHz	--
Hamamatsu	Si PIN photodiode S14605	for direct radiation detection	9 × 9 mm	--	--	30000 pA	--	20 MHz	25 pF
Hamamatsu	Si PIN photodiode S15137	--	φ5.0 mm	360 to 1120 nm	0.52 A/W	10000 pA	0.0125 μs	--	10 pF
Hamamatsu	Si PIN photodiode S15193	Cut-off frequency: 100 MHz to less than 500 MHz	φ0.8 mm	380 to 1000 nm	0.64 A/W	500 pA	--	100 MHz	2 pF
Hamamatsu	Si photodiode S15289-33	CSP type	2.5 × 2.5 mm	190 to 1100 nm	0.54 A/W	300 pA	50 μs	--	70 pF
Hamamatsu	Si photodiode S1087	For visible range	1.3 × 1.3 mm	320 to 730 nm	0.3 A/W	10 pA	0.5 μs	--	200 pF
Hamamatsu	Si photodiode S1087-01	For visible range to near IR	1.3 × 1.3 mm	320 to 1100 nm	0.58 A/W	10 pA	0.5 μs	--	200 pF
Hamamatsu	Si photodiode S1133	For visible range	2.8 × 2.4 mm	320 to 730 nm	0.3 A/W	10 pA	2.5 μs	--	700 pF
Hamamatsu	Si photodiode S1133-01	For visible range to near IR	2.8 × 2.4 mm	320 to 1100 nm	0.58 A/W	10 pA	2.5 μs	--	700 pF
Hamamatsu	Si photodiode S1133-14	For visible range to near IR	2.8 × 2.4 mm	320 to 1000 nm	0.4 A/W	20 pA	0.5 μs	--	200 pF
Hamamatsu	Si PIN photodiode S1223	Cut-off frequency: 10 MHz to less than 100 MHz	2.4 × 2.8 mm	320 to 1100 nm	0.52 A/W	10000 pA	--	30 MHz	10 pF
Hamamatsu	Si PIN photodiode S1223-01	Cut-off frequency: 10 MHz to less than 100 MHz	3.6 × 3.6 mm	320 to 1100 nm	0.52 A/W	10000 pA	--	20 MHz	20 pF
Hamamatsu	Si photodiode S1226-18BK	For UV to near IR: IR sensitivity suppressed type	1.1 × 1.1 mm	320 to 1000 nm	0.36 A/W	2 pA	0.15 μs	--	35 pF
Hamamatsu	Si photodiode S1226-18BQ	For UV to near IR: IR sensitivity suppressed type	1.1 × 1.1 mm	190 to 1000 nm	0.36 A/W	2 pA	0.15 μs	--	35 pF
Hamamatsu	Si photodiode S1226-44BK	For UV to near IR: IR sensitivity suppressed type	3.6 × 3.6 mm	320 to 1000 nm	0.36 A/W	10 pA	1 μs	--	500 pF
Hamamatsu	Si photodiode S1226-44BQ	For UV to near IR: IR sensitivity suppressed type	3.6 × 3.6 mm	190 to 1000 nm	0.36 A/W	10 pA	1 μs	--	500 pF
Hamamatsu	Si photodiode S1226-5BK	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	320 to 1000 nm	0.36 A/W	5 pA	0.5 μs	--	160 pF
Hamamatsu	Si photodiode S1226-5BQ	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	190 to 1000 nm	0.36 A/W	5 pA	0.5 μs	--	160 pF
Hamamatsu	Si photodiode S1226-8BK	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	320 to 1000 nm	0.36 A/W	20 pA	2 μs	--	1200 pF
Hamamatsu	Si photodiode S1226-8BQ	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	190 to 1000 nm	0.36 A/W	20 pA	2 μs	--	1200 pF
Hamamatsu	Si photodiode S1227-1010BQ	For UV to near IR: IR sensitivity suppressed type	10 × 10 mm	190 to 1000 nm	0.36 A/W	50 pA	7 μs	--	3000 pF
Hamamatsu	Si photodiode S1227-1010BR	For UV to near IR: IR sensitivity suppressed type	10 × 10 mm	340 to 1000 nm	0.43 A/W	50 pA	7 μs	--	3000 pF
Hamamatsu	Si photodiode S1227-16BQ	For UV to near IR: IR sensitivity suppressed type	5.9 × 1.1 mm	190 to 1000 nm	0.36 A/W	5 pA	0.5 μs	--	170 pF
Hamamatsu	Si photodiode S1227-16BR	For UV to near IR: IR sensitivity suppressed type	5.9 × 1.1 mm	340 to 1000 nm	0.43 A/W	5 pA	0.5 μs	--	170 pF
Hamamatsu	Si photodiode S1227-33BQ	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	190 to 1000 nm	0.36 A/W	5 pA	0.5 μs	--	160 pF
Hamamatsu	Si photodiode S1227-33BR	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	340 to 1000 nm	0.43 A/W	5 pA	0.5 μs	--	160 pF
Hamamatsu	Si photodiode S1227-66BQ	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	190 to 1000 nm	0.36 A/W	20 pA	2 μs	--	950 pF
Hamamatsu	Si photodiode S1227-66BR	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	340 to 1000 nm	0.43 A/W	20 pA	2 μs	--	950 pF
Hamamatsu	Si photodiode S1336-18BK	For UV to near IR: IR sensitivity suppressed type	1.1 × 1.1 mm	320 to 1100 nm	0.5 A/W	20 pA	0.1 μs	--	20 pF
Hamamatsu	Si photodiode S1336-18BQ	For UV to near IR: IR sensitivity suppressed type	1.1 × 1.1 mm	190 to 1100 nm	0.5 A/W	20 pA	0.1 μs	--	20 pF
Hamamatsu	Si photodiode S1336-44BK	For UV to near IR: IR sensitivity suppressed type	3.6 × 3.6 mm	320 to 1100 nm	0.5 A/W	50 pA	0.5 μs	--	150 pF
Hamamatsu	Si photodiode S1336-44BQ	For UV to near IR: IR sensitivity suppressed type	3.6 × 3.6 mm	190 to 1100 nm	0.5 A/W	50 pA	0.5 μs	--	150 pF
Hamamatsu	Si photodiode S1336-5BK	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	320 to 1100 nm	0.5 A/W	30 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S1336-5BQ	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	190 to 1100 nm	0.5 A/W	30 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S1336-8BK	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	320 to 1100 nm	0.5 A/W	100 pA	1 μs	--	380 pF
Hamamatsu	Si photodiode S1336-8BQ	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	190 to 1100 nm	0.5 A/W	100 pA	1 μs	--	380 pF
Hamamatsu	Si photodiode S1337-1010BQ	For UV to near IR: IR sensitivity suppressed type	10 × 10 mm	190 to 1100 nm	0.5 A/W	200 pA	3 μs	--	1100 pF
Hamamatsu	Si photodiode S1337-1010BR	For UV to near IR: IR sensitivity suppressed type	10 × 10 mm	340 to 1100 nm	0.62 A/W	200 pA	3 μs	--	1100 pF
Hamamatsu	Si photodiode S1337-16BQ	For UV to near IR: IR sensitivity suppressed type	5.9 × 1.1 mm	190 to 1100 nm	0.5 A/W	50 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S1337-16BR	For UV to near IR: IR sensitivity suppressed type	5.9 × 1.1 mm	340 to 1100 nm	0.62 A/W	50 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S1337-21	For UV to near IR: IR sensitivity suppressed type	18 × 18 mm	190 to 1100 nm	0.52 A/W	500 pA	8 μs	--	4000 pF
Hamamatsu	Si photodiode S1337-33BQ	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	190 to 1100 nm	0.5 A/W	30 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S1337-33BR	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	340 to 1100 nm	0.62 A/W	30 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S1337-66BQ	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	190 to 1100 nm	0.5 A/W	100 pA	1 μs	--	380 pF
Hamamatsu	Si photodiode S1337-66BR	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	340 to 1100 nm	0.62 A/W	100 pA	1 μs	--	380 pF
Hamamatsu	Si photodiode S1787-04	For visible range	2.8 × 2.4 mm	320 to 730 nm	0.3 A/W	10 pA	2.5 μs	--	700 pF
Hamamatsu	Si photodiode S1787-08	For visible range to near IR	2.8 × 2.4 mm	320 to 1100 nm	0.58 A/W	10 pA	2.5 μs	--	700 pF
Hamamatsu	Si photodiode S1787-12	For visible range to near IR	2.8 × 2.4 mm	320 to 1000 nm	0.35 A/W	20 pA	0.5 μs	--	200 pF
Hamamatsu	Si photodiode S2281	UV to near IR: UV sensivity enhanced type	φ11.3 mm	190 to 1100 nm	0.5 A/W	500 pA	3 μs	--	1300 pF
Hamamatsu	Si photodiode S2281-01	For UV to near IR: IR sensitivity suppressed type	φ11.3 mm	190 to 1000 nm	0.36 A/W	300 pA	7 μs	--	3200 pF
Hamamatsu	Si photodiode S2281-04	UV to near IR: UV sensivity enhanced type	φ7.98 mm	190 to 1100 nm	0.5 A/W	500 pA	3 μs	--	1300 pF
Hamamatsu	Si photodiode S2386-18K	For visible to near IR	1.1 × 1.1 mm	320 to 1100 nm	0.6 A/W	2 pA	0.4 μs	--	140 pF
Hamamatsu	Si photodiode S2386-18L	For visible to near IR	1.1 × 1.1 mm	320 to 1100 nm	0.6 A/W	2 pA	0.4 μs	--	140 pF
Hamamatsu	Si photodiode S2386-44K	For visible to near IR	3.6 × 3.6 mm	320 to 1100 nm	0.6 A/W	20 pA	3.6 μs	--	1600 pF
Hamamatsu	Si photodiode S2386-45K	For visible to near IR	3.9 × 4.6 mm	320 to 1100 nm	0.6 A/W	30 pA	5.5 μs	--	2300 pF
Hamamatsu	Si photodiode S2386-5K	For visible to near IR	2.4 × 2.4 mm	320 to 1100 nm	0.6 A/W	5 pA	1.8 μs	--	730 pF
Hamamatsu	Si photodiode S2386-8K	For visible to near IR	5.8 × 5.8 mm	320 to 1100 nm	0.6 A/W	50 pA	10 μs	--	4300 pF
Hamamatsu	Si photodiode S2387-1010R	For visible to near IR	10 × 10 mm	340 to 1100 nm	0.58 A/W	200 pA	33 μs	--	12000 pF
Hamamatsu	Si photodiode S2387-130R	For visible to near IR	29.1 × 1.2 mm	340 to 1100 nm	0.58 A/W	100 pA	11 μs	--	5000 pF
Hamamatsu	Si photodiode S2387-16R	For visible to near IR	5.9 × 1.1 mm	340 to 1100 nm	0.58 A/W	5 pA	1.8 μs	--	730 pF
Hamamatsu	Si photodiode S2387-33R	For visible to near IR	2.4 × 2.4 mm	340 to 1100 nm	0.58 A/W	5 pA	1.8 μs	--	730 pF
Hamamatsu	Si photodiode S2387-66R	For visible to near IR	5.8 × 5.8 mm	340 to 1100 nm	0.58 A/W	50 pA	10 μs	--	4300 pF
Hamamatsu	Si PIN photodiode S2506-02	Cut-off frequency: 10 MHz to less than 100 MHz	2.77 × 2.77 mm	320 to 1100 nm	0.48 A/W	10000 pA	--	25 MHz	15 pF
Hamamatsu	Si PIN photodiode S2506-04	Cut-off frequency: 10 MHz to less than 100 MHz	2.77 × 2.77 mm	760 to 1100 nm	0.56 A/W	10000 pA	--	25 MHz	15 pF
Hamamatsu	Si photodiode S2551	UV to near IR: UV sensivity enhanced type	1.2 × 29.1 mm	340 to 1060 nm	0.57 A/W	1000 pA	1.4 μs	--	350 pF
Hamamatsu	Si photodiode S2592-03	TE-cooled type	2.4 × 2.4 mm	190 to 1100 nm	0.5 A/W	38 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S2592-04	TE-cooled type	5.8 × 5.8 mm	190 to 1100 nm	0.5 A/W	200 pA	1 μs	--	380 pF
Hamamatsu	Si PIN photodiode S2744-08	Large active area Si PIN photodiode	20 × 10 mm	340 to 1100 nm	0.66 A/W	10000 pA	--	25 MHz	85 pF
Hamamatsu	Si photodiode S2833-01	For visible to near IR	2.4 × 2.8 mm	320 to 1100 nm	0.58 A/W	10 pA	2.5 μs	--	700 pF
Hamamatsu	Si photodiode S2833-04	For visible to near IR	2.4 × 2.8 mm	320 to 1100 nm	0.58 A/W	10 pA	0.5 μs	--	200 pF
Hamamatsu	Si PIN photodiode S3071	Cut-off frequency: 10 MHz to less than 100 MHz	φ5 mm	320 to 1060 nm	0.54 A/W	10000 pA	--	40 MHz	18 pF
Hamamatsu	Si PIN photodiode S3072	Cut-off frequency: 10 MHz to less than 100 MHz	φ3 mm	320 to 1060 nm	0.54 A/W	10000 pA	--	45 MHz	7 pF
Hamamatsu	Si PIN photodiode S3204-08	Large active area Si PIN photodiode	18 × 18 mm	340 to 1100 nm	0.66 A/W	20000 pA	--	20 MHz	130 pF
Hamamatsu	Si PIN photodiode S3399	Cut-off frequency: 100 MHz to less than 500 MHz	φ3 mm	320 to 1000 nm	0.58 A/W	1000 pA	--	100 MHz	20 pF
Hamamatsu	Si photodiode S3477-03	TE-cooled type	2.4 × 2.4 mm	190 to 1100 nm	0.5 A/W	38 pA	0.2 μs	--	65 pF
Hamamatsu	Si photodiode S3477-04	TE-cooled type	5.8 × 5.8 mm	190 to 1100 nm	0.5 A/W	200 pA	1 μs	--	380 pF
Hamamatsu	Si PIN photodiode S3584-08	Large active area Si PIN photodiode	28 × 28 mm	340 to 1100 nm	0.66 A/W	30000 pA	--	10 MHz	300 pF
Hamamatsu	S3588-08 Si PIN photodiode	Large active area Si PIN photodiode	30 × 3 mm	340 to 1100 nm	0.66 A/W	10000 pA	--	40 MHz	40 pF
Hamamatsu	S3590-08 Si PIN photodiode	Large active area Si PIN photodiode	10 × 10 mm	340 to 1100 nm	0.66 A/W	6000 pA	--	40 MHz	40 pF
Hamamatsu	S3590-09 Si PIN photodiode	Large active area Si PIN photodiode	10 × 10 mm	340 to 1100 nm	0.66 A/W	6000 pA	--	40 MHz	40 pF
Hamamatsu	S3590-18 Si PIN photodiode	Large active area Si PIN photodiode	10 × 10 mm	340 to 1100 nm	0.65 A/W	10000 pA	--	40 MHz	40 pF
Hamamatsu	S3590-19 Si PIN photodiode	Large active area Si PIN photodiode	10 × 10 mm	340 to 1100 nm	0.58 A/W	10000 pA	--	40 MHz	40 pF
Hamamatsu	S3759 Si PIN photodiode	For YAG laser detection	φ5 mm	360 to 1120 nm	0.7 A/W	10000 pA	--	--	10 pF
Hamamatsu	S3883 Si PIN photodiode	Cut-off frequency: 100 MHz to less than 500 MHz	φ1.5 mm	320 to 1000 nm	0.58 A/W	1000 pA	--	300 MHz	6 pF
Hamamatsu	S3994-01 Si PIN photodiode	Violet and blue sensitivity enhanced type	10 × 10 mm	320 to 1100 nm	0.65 A/W	10000 pA	--	20 MHz	40 pF
Hamamatsu	S4011-06DS Si photodiode	For visible to near IR	1.3 × 1.3 mm	320 to 1100 nm	0.58 A/W	10 pA	0.5 μs	--	200 pF
Hamamatsu	S4707-01 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	2.4 × 2.8 mm	320 to 1100 nm	0.6 A/W	5000 pA	--	20 MHz	14 pF
Hamamatsu	S4797-01 Si photodiode	For visible to near IR	1.3 × 1.3 mm	320 to 1000 nm	0.4 A/W	20 pA	0.2 μs	--	50 pF
Hamamatsu	S5106 Si PIN photodiode	High-speed response Si PIN photodiode	5 × 5 mm	320 to 1100 nm	0.72 A/W	5000 pA	--	20 MHz	40 pF
Hamamatsu	S5107 Si PIN photodiode	High-speed response Si PIN photodiode	10 × 10 mm	320 to 1100 nm	0.72 A/W	10000 pA	--	10 MHz	150 pF
Hamamatsu	S5627-01 Si photodiode	For visible	1.3 × 1.3 mm	320 to 840 nm	0.3 A/W	50 pA	2 μs	--	700 pF
Hamamatsu	S5821 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ1.2 mm	320 to 1100 nm	0.52 A/W	2000 pA	--	25 MHz	3 pF
Hamamatsu	S5821-01 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ1.2 mm	320 to 1100 nm	0.52 A/W	2000 pA	--	25 MHz	3 pF
Hamamatsu	S5821-02 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ1.2 mm	320 to 1100 nm	0.52 A/W	2000 pA	--	25 MHz	3 pF
Hamamatsu	S5821-03 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ1.2 mm	320 to 1100 nm	0.52 A/W	2000 pA	--	25 MHz	3 pF
Hamamatsu	S5971 Si PIN photodiode	Cut-off frequency: 100 MHz to less than 500 MHz	φ1.2 mm	320 to 1060 nm	0.55 A/W	1000 pA	--	100 MHz	3 pF
Hamamatsu	S5972 Si PIN photodiode	Cut-off frequency: 500 MHz to less than 1 GHz	φ0.8 mm	320 to 1000 nm	0.55 A/W	500 pA	--	500 MHz	3 pF
Hamamatsu	S5973 Si PIN photodiode	Cut-off frequency: 1 GHz or more	φ0.4 mm	320 to 1000 nm	0.51 A/W	100 pA	--	1000 MHz	1.6 pF
Hamamatsu	S5973-01 Si PIN photodiode	Cut-off frequency: 1 GHz or more	φ0.4 mm	320 to 1000 nm	0.51 A/W	100 pA	--	1000 MHz	1.6 pF
Hamamatsu	S5973-02 Si PIN photodiode	Cut-off frequency: 1 GHz or more	φ0.4 mm	320 to 1000 nm	0.42 A/W	100 pA	--	1000 MHz	1.6 pF
Hamamatsu	S6036 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ7 mm	320 to 1100 nm	0.56 A/W	10000 pA	--	25 MHz	15 pF
Hamamatsu	S6775 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	5.5 × 4.8 mm	320 to 1100 nm	0.55 A/W	10000 pA	--	15 MHz	40 pF
Hamamatsu	S6775-01 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	5.5 × 4.8 mm	700 to 1100 nm	0.68 A/W	10000 pA	--	15 MHz	40 pF
Hamamatsu	S6801-01 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ14 mm	700 to 1100 nm	0.55 A/W	10000 pA	--	15 MHz	40 pF
Hamamatsu	S6931-01 Si photodiode	For visible to near IR	2.4 × 2.8 mm	320 to 1000 nm	0.48 A/W	20 pA	0.5 μs	--	200 pF
Hamamatsu	S6967 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	5.5 × 4.8 mm	320 to 1060 nm	0.65 A/W	5000 pA	--	50 MHz	50 pF
Hamamatsu	S7478 Si PIN photodiode	High-speed response Si PIN photodiode	5 × 5 mm	320 to 1100 nm	0.72 A/W	5000 pA	--	20 MHz	40 pF
Hamamatsu	S7509 Si PIN photodiode	High-speed response Si PIN photodiode	10 × 2 mm	320 to 1100 nm	0.72 A/W	5000 pA	--	20 MHz	40 pF
Hamamatsu	S7510 Si PIN photodiode	High-speed response Si PIN photodiode	11 × 6 mm	320 to 1100 nm	0.72 A/W	10000 pA	--	15 MHz	80 pF
Hamamatsu	S7686 Si photodiode	For visible	2.8 × 2.4 mm	480 to 660 nm	0.38 A/W	20 pA	0.5 μs	--	200 pF
Hamamatsu	S8193 Si photodiode	With scintillator	5.8 × 5.8 mm	--	--	50 pA	--	--	950 pF
Hamamatsu	S8385 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	2 × 2 mm	320 to 1100 nm	0.48 A/W	1000 pA	--	25 MHz	12 pF
Hamamatsu	S8553 Si photodiode	For excimerlaser detection	18 × 18 mm	--	0.06 A/W	5000 pA	18 μs	--	8000 pF
Hamamatsu	S8559 Si photodiode	With scintillator	5.8 × 5.8 mm	--	--	50 pA	--	--	950 pF
Hamamatsu	S8650 Si PIN photodiode	Large active area Si PIN photodiode	10 × 10 mm	340 to 1100 nm	0.66 A/W	6000 pA	--	40 MHz	40 pF
Hamamatsu	S8729 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	2 × 3.3 mm	320 to 1100 nm	0.55 A/W	2000 pA	--	25 MHz	16 pF
Hamamatsu	S8729-04 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	2 × 3.3 mm	760 to 1100 nm	0.68 A/W	2000 pA	--	25 MHz	16 pF
Hamamatsu	S8729-10 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	2 × 3.3 mm	320 to 1100 nm	0.55 A/W	2000 pA	--	25 MHz	16 pF
Hamamatsu	S8745-01 Si photodiode with preamp	With preamp for measurement	2.4 × 2.4 mm	190 to 1100 nm	--	--	--	--	--
Hamamatsu	S8746-01 Si photodiode with preamp	With preamp for measurement	5.8 × 5.8 mm	190 to 1100 nm	--	--	--	--	--
Hamamatsu	S9055 Si PIN photodiode	Cut-off frequency: 1 GHz or more	φ0.2 mm	320 to 1000 nm	0.25 A/W	100 pA	--	1500 MHz	0.8 pF
Hamamatsu	S9055-01 Si PIN photodiode	Cut-off frequency: 1 GHz or more	φ0.1 mm	320 to 1000 nm	0.25 A/W	100 pA	--	2000 MHz	0.5 pF
Hamamatsu	S9195 Si PIN photodiode	Violet and blue sensitivity enhanced type	5 × 5 mm	320 to 1000 nm	0.28 A/W	5000 pA	--	50 MHz	60 pF
Hamamatsu	S9219 Si photodiode	For visible	φ11.3 mm	380 to 780 nm	0.24 A/W	500 pA	2.5 μs	--	1100 pF
Hamamatsu	S9219-01 Si photodiode	For visible	3.6 × 3.6 mm	380 to 780 nm	0.22 A/W	50 pA	0.5 μs	--	150 pF
Hamamatsu	S9295 Si photodiode with preamp	With preamp for measurement	10 × 10 mm	190 to 1100 nm	--	--	--	--	--
Hamamatsu	S9295-01 Si photodiode with preamp	With preamp for measurement	10 × 10 mm	190 to 1100 nm	--	--	--	--	--
Hamamatsu	S9674 Si photodiode	For automotive	2 × 2 mm	320 to 1100 nm	0.7 A/W	1000 pA	2 μs	--	500 pF
Hamamatsu	S9981-01CT Si photodiode	For automotive	1.3 × 1.3 mm	320 to 1100 nm	0.65 A/W	1000 pA	0.5 μs	--	200 pF
Hamamatsu	S10043 Si photodiode	For excimerlaser detection	10 × 10 mm	190 to 1000 nm	0.015 A/W	1000 pA	9 μs	--	4000 pF
Hamamatsu	S10625-01CT Si photodiode	small package type	1.3 × 1.3 mm	320 to 1100 nm	0.54 A/W	10000 pA	0.5 μs	--	200 pF
Hamamatsu	S10783 Si PIN photodiode	Cut-off frequency: 100 MHz to less than 500 MHz	φ0.8 mm	330 to 1040 nm	0.52 A/W	1000 pA	--	250 MHz	4.5 pF
Hamamatsu	S10784 Si PIN photodiode	Cut-off frequency: 100 MHz to less than 500 MHz	φ3.0 mm	340 to 1040 nm	0.51 A/W	1000 pA	--	250 MHz	4.5 pF
Hamamatsu	S10993-02CT Si PIN photodiode	Cut-off frequency: 5 MHz to less than 100 MHz	1.06 × 1.06 mm	380 to 1100 nm	0.6 A/W	1000 pA	--	10 MHz	6 pF
Hamamatsu	S11141-10 Si photodiode	For electron beam detector	10 x 10 mm	--	--	60000 pA	--	2.5 MHz	450 pF
Hamamatsu	S11142-10 Si photodiode	For electron beam detector	14 x 14 mm	--	--	60000 pA	--	5 MHz	200 pF
Hamamatsu	S12158-01CT Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	2.77 × 2.77 mm	320 to 1100 nm	0.7 A/W	10000 pA	--	25 MHz	15 pF
Hamamatsu	S12271 Si PIN photodiode	Cut-off frequency: 10 MHz to less than 100 MHz	φ4.1 mm	190 to 1100 nm	0.5 A/W	30000 pA	--	60 MHz	10 pF
Hamamatsu	S12698 Si photodiode	For UV to near IR: IR sensitivity suppressed type	1.1 × 1.1 mm	190 to 1000 nm	0.38 A/W	10 pA	0.1 μs	--	25 pF
Hamamatsu	S12698-01 Si photodiode	For UV to near IR: IR sensitivity suppressed type	2.4 × 2.4 mm	190 to 1000 nm	0.38 A/W	30 pA	0.5 μs	--	230 pF
Hamamatsu	S12698-02 Si photodiode	For UV to near IR: IR sensitivity suppressed type	5.8 × 5.8 mm	190 to 1000 nm	0.38 A/W	100 pA	1.5 μs	--	700 pF
Hamamatsu	S12742-220 Si photodiode	For monochromatic light detection	3.6 × 3.6 mm	216 to 224 nm	0.006 A/W	25 pA	1 μs	--	500 pF
Hamamatsu	S12742-254 Si photodiode	For monochromatic light detection	3.6 × 3.6 mm	252 to 256 nm	0.018 A/W	25 pA	1 μs	--	500 pF
Hamamatsu	S12742-275 Si photodiode	For monochromatic light detection	3.6 × 3.6 mm	271 to 279 nm	0.01 A/W	25 pA	1 μs	--	500 pF
Hamamatsu	S13773 Si PIN photodiode	Cut-off frequency: 500 MHz to less than 1 GHz	φ0.8 mm	380 to 1000 nm	0.54 A/W	500 pA	--	500 MHz	3 pF
Hamamatsu	S13955-01 Si photodiode	CSP type	7.05 × 7.05 mm	400 to 1100 nm	0.61 A/W	1000 pA	15 μs	--	500 pF
Hamamatsu	S13956-01 Si photodiode	CSP type	2.5 × 2.5 mm	400 to 1100 nm	0.61 A/W	300 pA	15 μs	--	60 pF
Hamamatsu	S13957-01 Si photodiode	CSP type	4.5 × 4.5 mm	400 to 1100 nm	0.61 A/W	1000 pA	15 μs	--

Si photodiode arrays

Si photodiode arrays

Si photodiode array is a sensor with multiple Si photodiodes arranged in a single package. An image sensor can be configured by arranging multiple photodiodes. It can be used in a wide range of applications such as light position detection, imaging, and spectrophotometry.

Manufacturer	Part No	Product Name	Photosensitive area)	Number of elements	Reverse voltage (max.)	Spectral response range	Peak sensitivity wavelength (typ.)	Photosensitivity (typ.)	Dark current (max.)	Terminal capacitance (typ.)
Hamamatsu	S14833	Si PIN photodiode array S14833	2.76 × 1.37 mm	6	30 V	340 to 1100 nm	960 nm	0.68 A/W	5000 pA	9 pF
Hamamatsu	S15158	Si PIN photodiode array	0.7 × 2.0 mm	16	30 V	380 to 1100 nm	960 nm	0.63 A/W	10000 pA	60 pF
Hamamatsu	S4111-16Q	Si photodiode array	0.9 × 1.45 mm	16	15 V	190 to 1100 nm	960 nm	0.58 A/W	5 pA	200 pF
Hamamatsu	S4111-16R	Si photodiode array	0.9 × 1.45 mm	16	15 V	340 to 1100 nm	960 nm	0.58 A/W	5 pA	200 pF
Hamamatsu	S4111-35Q	Si photodiode array	0.9 × 4.4 mm	35	15 V	190 to 1100 nm	960 nm	0.58 A/W	10 pA	550 pF
Hamamatsu	S4111-46Q	Si photodiode array	0.9 × 4.4 mm	46	15 V	190 to 1100 nm	960 nm	0.58 A/W	10 pA	550 pF
Hamamatsu	S4114-35Q	Si photodiode array	0.9 × 4.4 mm	35	15 V	190 to 1000 nm	800 nm	0.5 A/W	60 pA	35 pF
Hamamatsu	S4114-46Q	Si photodiode array	0.9 × 4.4 mm	46	15 V	190 to 1000 nm	800 nm	0.5 A/W	60 pA	35 pF
Hamamatsu	S8558	Si PIN photodiode array	0.7 × 2.0 mm	16	30 V	320 to 1100 nm	960 nm	0.72 A/W	1000 pA	5 pF
Hamamatsu	S11212-021	16-element Si photodiode array	1.175 × 2.0 mm	16	10 V	340 to 1100 nm	920 nm	0.61 A/W	30 pA	40 pF
Hamamatsu	S11212-121	16-element Si photodiode array	1.175 × 2.0 mm	16	10 V	--	--	--	30 pA	40 pF
Hamamatsu	S11212-321	16-element Si photodiode array	1.175 × 2.0 mm	16	10 V	--	--	--	30 pA	40 pF
Hamamatsu	S11212-421	16-element Si photodiode array	1.175 × 2.0 mm	16	10 V	--	--	--	30 pA	40 pF
Hamamatsu	S11299-021	16-element Si photodiode array	1.175 × 2.0 mm	16	--	340 to 1100 nm	920 nm	0.61 A/W	30 pA	40 pF
Hamamatsu	S11299-121	16-element Si photodiode array	1.175 × 2.0 mm	16	--	--	--	--	30 pA	40 pF
Hamamatsu	S11299-321	16-element Si photodiode array	1.175 × 2.0 mm	16	--	--	--	--	30 pA	40 pF
Hamamatsu	S11299-421	16-element Si photodiode array	1.175 × 2.0 mm	16	--	--	--	--	30 pA	40 pF
Hamamatsu	S12362-021	16-element Si photodiode array	2.2 × 2.7 mm	16	--	340 to 1100 nm	920 nm	0.61 A/W	50 pA	75 pF
Hamamatsu	S12362-121	16-element Si photodiode array	2.2 × 2.7 mm	16	--	--	--	--	50 pA	75 pF
Hamamatsu	S12362-321	16-element Si photodiode array	2.2 × 2.7 mm	16	--	--	--	--	50 pA	75 pF
Hamamatsu	S12362-421	16-element Si photodiode array	2.2 × 2.7 mm	16	--	--	--	--	50 pA	75 pF
Hamamatsu	S12363-021	16-element Si photodiode array	2.2 × 2.7 mm	16	--	340 to 1100 nm	920 nm	0.61 A/W	50 pA	75 pF
Hamamatsu	S12363-121	16-element Si photodiode array	2.2 × 2.7 mm	16	--	--	--	--	50 pA	75 pF
Hamamatsu	S12363-321	16-element Si photodiode array	2.2 × 2.7 mm	16	--	--	--	--	50 pA	75 pF
Hamamatsu	S12363-421	16-element Si photodiode array	2.2 × 2.7 mm	16	--	--	--	--	50 pA	75 pF
Hamamatsu	S12858-021	16-element Si photodiode array	0.77 × 2.5 mm	16	--	340 to 1100 nm	920 nm	0.61 A/W	30 pA	30 pF
Hamamatsu	S12858-122	16-element Si photodiode array	0.77 × 2.5 mm	16	--	--	--	--	30 pA	30 pF
Hamamatsu	S12858-324	16-element Si photodiode array	0.77 × 2.5 mm	16	--	--	--	--	30 pA	30 pF
Hamamatsu	S12858-422	16-element Si photodiode array	0.77 × 2.5 mm	16	--	--	--	--	30 pA	30 pF
Hamamatsu	S12859-021	16-element Si photodiode array	0.77 × 2.5 mm	16	--	340 to 1100 nm	920 nm	0.61 A/W	30 pA	30 pF
Hamamatsu	S12859-122	16-element Si photodiode array	0.77 × 2.5 mm	16	--	--	--	--	30 pA	30 pF
Hamamatsu	S12859-324	16-element Si photodiode array	0.77 × 2.5 mm	16	--	--	--	--	30 pA	30 pF
Hamamatsu	S12859-422	16-element Si photodiode array	0.77 × 2.5 mm	16	--	--	--	--	30 pA	30 pF
Hamamatsu	S13620-02	64-element Si photodiode array	2.5 × 2.5 mm	64	10 V	400 to 1100 nm	960 nm	0.61 A/W	300 pA	60 pF

Hamamatsu Segmented Si photodiodes

Silicon PIN photodiodes consisting of 2 or 4 elements. Sensitive to UV and near-infrared ranges.

Manufacturer	Part No	Product Name	Element size (per 1 element)	Number of elements	Scintillator type	Package	Cooling	Reverse voltage (max.)	Spectral response range	Peak sensitivity wavelength (typ.)
Hamamatsu	S3096-02	Si PIN photodiode	1.2 x 3 mm	2-segment	Plastic	--	Non-cooled	320 to 1100 nm	960 nm	0.58 A/W
Hamamatsu	S4204	Si PIN photodiode	1 x 2 mm	2-segment	Plastic	--	Non-cooled	320 to 1100 nm	960 nm	0.65 A/W
Hamamatsu	S4349	Si PIN photodiode	3 x 3 mm	4-segment	Metal	TO-5	Non-cooled	190 to 1000 nm	720 nm	0.45 A/W
Hamamatsu	S5870	Si PIN photodiode	10 x 10 mm	2-segment	Ceramic	Surface mount type	Non-cooled	320 to 1100 nm	960 nm	0.72 A/W
Hamamatsu	S5980	Si PIN photodiode	5 x 5 mm	4-segment	Ceramic	Surface mount type	Non-cooled	320 to 1100 nm	960 nm	0.72 A/W
Hamamatsu	S5981	Si PIN photodiode	10 x 10 mm	4-segment	Ceramic	Surface mount type	Non-cooled	320 to 1100 nm	960 nm	0.72 A/W
Hamamatsu	S9345	Si PIN photodiode	1.5 x 5.6 mm	2-segment	Plastic	Surface mount type	Non-cooled	320 to 1100 nm	960 nm	0.55 A

Si strip detector

An SSD is a Si photodiode array with strips of photosensitive areas (PN junctions) with a width ranging from several micrometers to several tens of micrometers formed on a substrate. It can detect incident positions of high energy particles at the micron level.

Manufacturer	Part No	Product Name	Type	Si Thickness	Si crystal plane direction	Breakdown voltage min	Dark curent max	Full depletion voltage max	Defective strip rate max
Hamamatsu	S13804	Si strip detector	Poly Si-bias AC-readout	320 ±15 μm	<100>	200 V	3 μA	100 V	5 %

Hamamatsu Photodiode array circuits

Driver circuit for silicon photodiode arrays.

Hamamatsu C9004 Driver circuit for Si photodiode array

Hamamatsu Si photodiode arrays with amplifier

Silicon photodiode arrays combined with signal processing integrated circuits (IC). Driver circuits available for easy implementation.

Si photodiode arrays with amplifier

Silicon photodiode arrays combined with signal processing integrated circuits (IC). 64-256 ch arrays with or without scintillators. Driver circuits available for easy implementation.

Manufacturer	Part no	Product name	Image size	Number of effective pixels	Pixel size	Pixel pitch	Supply voltage	Scintillator	Spectral response range	Line rate max.	Charge amp feedback capacitance
Hamamatsu	S11865-128	Photodiode array with amplifier	51.2 x 0.6 mm	128 pixels	0.3 x 0.6 mm	0.4 mm	5 V	None	200 to 1000 nm	7568 lines/s	0.5 pF
Hamamatsu	S11865-128G	Photodiode array with amplifier	51.2 x 0.6 mm	128 pixels	0.3 x 0.6 mm	0.4 mm	5 V	Phosphor sheet	--	7568 lines/s	0.5 pF
Hamamatsu	S11865-256	Photodiode array with amplifier	51.2 x 0.3 mm	256 pixels	0.1 x 0.3 mm	0.2 mm	5 V	None	200 to 1000 nm	3844 lines/s	0.5 pF
Hamamatsu	S11865-256G	Photodiode array with amplifier	51.2 x 0.3 mm	256 pixels	0.1 x 0.3 mm	0.2 mm	5 V	Phosphor sheet	--	3844 lines/s	0.5 pF
Hamamatsu	S11865-64	Photodiode array with amplifier	51.2 x 0.8 mm	64 pixels	0.7 x 0.8 mm	0.8 mm	5 V	None	200 to 1000 nm	14678 lines/s	0.5 pF
Hamamatsu	S11865-64G	Photodiode array with amplifier	51.2 x 0.8 mm	64 pixels	0.7 x 0.8 mm	0.8 mm	5 V	Phosphor sheet	--	14678 lines/s	0.5 pF
Hamamatsu	S11866-128-02	Photodiode array with amplifier	102.4 x 0.8 mm	128 pixels	0.7 x 0.8 mm	0.8 mm	5 V	None	200 to 1000 nm	7568 lines/s	0.5 pF
Hamamatsu	S11866-128G-02	Photodiode array with amplifier	102.4 x 0.8 mm	128 pixels	0.7 x 0.8 mm	0.8 mm	5 V	Phosphor sheet	--	7568 lines/s	0.5 pF
Hamamatsu	S11866-64-02	Photodiode array with amplifier	102.4 x 1.6 mm	64 pixels	1.5 x 1.6 mm	1.6 mm	5 V	None	200 to 1000 nm	14678 lines/s	0.5 pF
Hamamatsu	S11866-64G-02	Photodiode array with amplifier	102.4 x 1.6 mm	64 pixels	1.5 x 1.6 mm	1.6 mm	5 V	Phosphor sheet	--	14678 lines/s	0.5 pF
Hamamatsu	S13885-128	Photodiode array with amplifier	51.2 x 0.6 mm	128 pixels	0.3 x 0.6 mm	0.4 mm	3.3 V	None	200 to 1000 nm	7568 lines/s	0.125 pF
Hamamatsu	S13885-128G	Photodiode array with amplifier	51.2 x 0.6 mm	128 pixels	0.3 x 0.6 mm	0.4 mm	3.3 V	Phosphor sheet	--	7568 lines/s	0.125 pF
Hamamatsu	S13885-256	Photodiode array with amplifier	51.2 x 0.3 mm	256 pixels	0.1 x 0.3 mm	0.2 mm	3.3 V	None	200 to 1000 nm	3844 lines/s	0.125 pF
Hamamatsu	S13885-256G	Photodiode array with amplifier	51.2 x 0.3 mm	256 pixels	0.1 x 0.3 mm	0.2 mm	3.3 V	Phosphor sheet	--	3844 lines/s	0.125 pF
Hamamatsu	S13886-128	Photodiode array with amplifier	102.4 x 0.8 mm	128 pixels	0.7 x 0.8 mm	0.8 mm	3.3 V	None	200 to 1000 nm	7568 lines/s	0.125 pF
Hamamatsu	S13886-128G	Photodiode array with amplifier	102.4 x 0.8 mm	128 pixels	0.7 x 0.8 mm	0.4 mm	3.3 V	Phosphor sheet	--	7568 lines/s	0.125 pF

Hamamatsu Driver circuits for photodiode array with amplifier

Driver circuits for photodiode arrays with amplifiers.

Hamamatsu C9118-01 Driver circuit for photodiode array with amplifier

InGaAs photodiodes

Part no.	Product name	Spectral response range	Peak sensitivity wavelength (typ.)	Photosensitive area	Photosensitivity (typ.)	Cutoff frequency (typ.)	Terminal capacitance (typ.)	Noise equivalent power (typ.)	Package
G15553-003C	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.3 mm	1.1 A/W	600 MHz	5 pF	4×10-15 W/Hz1/2	Ceramic
G15553-005C	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.5 mm	1.1 A/W	200 MHz	15 pF	7×10-15 W/Hz1/2	Ceramic
G15553-010C	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ1.0 mm	1.1 A/W	60 MHz	55 pF	2×10-14 W/Hz1/2	Ceramic
G12183-210KA-03	InGaAs PIN photodiode	0.9 to 2.55 μm	2.3 μm	φ1.0 mm	1.3 A/W	4 MHz	500 pF	2×10-13 W/Hz1/2	Metal
G14448-003L	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.3 mm	0.95 A/W	600 MHz	5 pF	5×10-15 W/Hz1/2	Plastic
G10899-003K	InGaAs PIN photodiode	0.5 to 1.7 μm	1.55 μm	φ0.3 mm	1 A/W	300 MHz	10 pF	5×10-15 W/Hz1/2	Metal
G10899-005K	InGaAs PIN photodiode	0.5 to 1.7 μm	1.55 μm	φ0.5 mm	1 A/W	150 MHz	20 pF	9×10-15 W/Hz1/2	Metal
G10899-01K	InGaAs PIN photodiode	0.5 to 1.7 μm	1.55 μm	φ1.0 mm	1 A/W	45 MHz	70 pF	2×10-14 W/Hz1/2	Metal
G10899-02K	InGaAs PIN photodiode	0.5 to 1.7 μm	1.55 μm	φ2.0 mm	1 A/W	10 MHz	300 pF	3×10-14 W/Hz1/2	Metal
G10899-03K	InGaAs PIN photodiode	0.5 to 1.7 μm	1.55 μm	φ3.0 mm	1 A/W	5 MHz	600 pF	5×10-14 W/Hz1/2	Metal
G11193-02R	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.2 mm	1 A/W	1000 MHz	3 pF	3×10-15 W/Hz1/2	Ceramic
G11193-03R	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.3 mm	1 A/W	500 MHz	5 pF	4×10-15 W/Hz1/2	Ceramic
G11193-10R	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ1.0 mm	1 A/W	60 MHz	55 pF	1.4×10-14 W/Hz1/2	Ceramic
G12180-003A	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.3 mm	1.1 A/W	600 MHz	5 pF	4.2×10-15 W/Hz1/2	Metal
G12180-005A	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.5 mm	1.1 A/W	200 MHz	15 pF	7.0×10-15 W/Hz1/2	Metal
G12180-010A	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ1.0 mm	1.1 A/W	60 MHz	55 pF	1.4×10-14 W/Hz1/2	Metal
G12180-020A	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ2.0 mm	1.1 A/W	13 MHz	250 pF	2.8×10-14 W/Hz1/2	Metal
G12180-030A	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ3.0 mm	1.1 A/W	7 MHz	450 pF	4.4×10-14 W/Hz1/2	Metal
G12180-050A	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ5.0 mm	1.1 A/W	3 MHz	1000 pF	7.0×10-14 W/Hz1/2	Metal
G12180-110A	InGaAs PIN photodiode	0.9 to 1.67 μm	1.55 μm	φ1.0 mm	1.1 A/W	40 MHz	75 pF	2.0×10-15 W/Hz1/2	Metal
G12180-120A	InGaAs PIN photodiode	0.9 to 1.67 μm	1.55 μm	φ2.0 mm	1.1 A/W	13 MHz	250 pF	4.0×10-15 W/Hz1/2	Metal
G12180-130A	InGaAs PIN photodiode	0.9 to 1.67 μm	1.55 μm	φ3.0 mm	1.1 A/W	7 MHz	450 pF	4.9×10-15 W/Hz1/2	Metal
G12180-150A	InGaAs PIN photodiode	0.9 to 1.67 μm	1.55 μm	φ5.0 mm	1.1 A/W	3 MHz	1000 pF	8.6×10-15 W/Hz1/2	Metal
G12180-210A	InGaAs PIN photodiode	0.9 to 1.65 μm	1.55 μm	φ1.0 mm	1.1 A/W	40 MHz	75 pF	1.3×10-15 W/Hz1/2	Metal
G12180-220A	InGaAs PIN photodiode	0.9 to 1.65 μm	1.55 μm	φ2.0 mm	1.1 A/W	13 MHz	250 pF	2.7×10-15 W/Hz1/2	Metal
G12180-230A	InGaAs PIN photodiode	0.9 to 1.65 μm	1.55 μm	φ3.0 mm	1.1 A/W	7 MHz	450 pF	3.2×10-15 W/Hz1/2	Metal
G12180-250A	InGaAs PIN photodiode	0.9 to 1.65 μm	1.55 μm	φ5.0 mm	1.1 A/W	3 MHz	1000 pF	5.3×10-15 W/Hz1/2	Metal
G12181-003K	InGaAs PIN photodiode	0.9 to 1.9 μm	1.75 μm	φ0.3 mm	1.1 A/W	90 MHz	25 pF	2.0×10-14 W/Hz1/2	Metal
G12181-005K	InGaAs PIN photodiode	0.9 to 1.9 μm	1.75 μm	φ0.5 mm	1.1 A/W	35 MHz	70 pF	3.0×10-14 W/Hz1/2	Metal
G12181-010K	InGaAs PIN photodiode	0.9 to 1.9 μm	1.75 μm	φ1.0 mm	1.1 A/W	10 MHz	230 pF	6.0×10-14 W/Hz1/2	Metal
G12181-020K	InGaAs PIN photodiode	0.9 to 1.9 μm	1.75 μm	φ2.0 mm	1.1 A/W	2.5 MHz	1000 pF	1.5×10-13 W/Hz1/2	Metal
G12181-030K	InGaAs PIN photodiode	0.9 to 1.9 μm	1.75 μm	φ3.0 mm	1.1 A/W	1.5 MHz	2000 pF	2.0×10-13 W/Hz1/2	Metal
G12181-103K	InGaAs PIN photodiode	0.9 to 1.87 μm	1.75 μm	φ0.3 mm	1.1 A/W	140 MHz	22 pF	5.0×10-15 W/Hz1/2	Metal
G12181-105K	InGaAs PIN photodiode	0.9 to 1.87 μm	1.75 μm	φ0.5 mm	1.1 A/W	50 MHz	64 pF	7.0×10-15 W/Hz1/2	Metal
G12181-110K	InGaAs PIN photodiode	0.9 to 1.87 μm	1.75 μm	φ1.0 mm	1.1 A/W	16 MHz	200 pF	1.5×10-14 W/Hz1/2	Metal
G12181-120K	InGaAs PIN photodiode	0.9 to 1.87 μm	1.75 μm	φ2.0 mm	1.1 A/W	3.5 MHz	900 pF	3.5×10-14 W/Hz1/2	Metal
G12181-130K	InGaAs PIN photodiode	0.9 to 1.87 μm	1.75 μm	φ3.0 mm	1.1 A/W	1.8 MHz	1800 pF	5.0×10-14 W/Hz1/2	Metal
G12181-203K	InGaAs PIN photodiode	0.9 to 1.85 μm	1.75 μm	φ0.3 mm	1.1 A/W	150 MHz	20 pF	3.5×10-15 W/Hz1/2	Metal
G12181-205K	InGaAs PIN photodiode	0.9 to 1.85 μm	1.75 μm	φ0.5 mm	1.1 A/W	53 MHz	60 pF	5.0×10-15 W/Hz1/2	Metal
G12181-210K	InGaAs PIN photodiode	0.9 to 1.85 μm	1.75 μm	φ1.0 mm	1.1 A/W	17 MHz	195 pF	1.0×10-14 W/Hz1/2	Metal
G12181-220K	InGaAs PIN photodiode	0.9 to 1.85 μm	1.75 μm	φ2.0 mm	1.1 A/W	3.7 MHz	850 pF	2.5×10-14 W/Hz1/2	Metal
G12181-230K	InGaAs PIN photodiode	0.9 to 1.85 μm	1.75 μm	φ3.0 mm	1.1 A/W	1.9 MHz	1700 pF	3.5×10-14 W/Hz1/2	Metal
G12182-003K	InGaAs PIN photodiode	0.9 to 2.1 μm	1.95 μm	φ0.3 mm	1.2 A/W	90 MHz	25 pF	6.5×10-14 W/Hz1/2	Metal
G12182-005K	InGaAs PIN photodiode	0.9 to 2.1 μm	1.95 μm	φ0.5 mm	1.2 A/W	35 MHz	70 pF	1.5×10-13 W/Hz1/2	Metal
G12182-010K	InGaAs PIN photodiode	0.9 to 2.1 μm	1.95 μm	φ1.0 mm	1.2 A/W	10 MHz	230 pF	2.5×10-13 W/Hz1/2	Metal
G12182-020K	InGaAs PIN photodiode	0.9 to 2.1 μm	1.95 μm	φ2.0 mm	1.2 A/W	2.5 MHz	1000 pF	5.5×10-13 W/Hz1/2	Metal
G12182-030K	InGaAs PIN photodiode	0.9 to 2.1 μm	1.95 μm	φ3.0 mm	1.2 A/W	1.5 MHz	2000 pF	8.5×10-13 W/Hz1/2	Metal
G12182-103K	InGaAs PIN photodiode	0.9 to 2.07 μm	1.95 μm	φ0.3 mm	1.2 A/W	140 MHz	22 pF	1.5×10-14 W/Hz1/2	Metal
G12182-105K	InGaAs PIN photodiode	0.9 to 2.07 μm	1.95 μm	φ0.5 mm	1.2 A/W	50 MHz	64 pF	3.0×10-14 W/Hz1/2	Metal
G12182-110K	InGaAs PIN photodiode	0.9 to 2.07 μm	1.95 μm	φ1.0 mm	1.2 A/W	16 MHz	200 pF	5.5×10-14 W/Hz1/2	Metal
G12182-120K	InGaAs PIN photodiode	0.9 to 2.07 μm	1.95 μm	φ2.0 mm	1.2 A/W	3.5 MHz	900 pF	1.5×10-13 W/Hz1/2	Metal
G12182-130K	InGaAs PIN photodiode	0.9 to 2.07 μm	1.95 μm	φ3.0 mm	1.2 A/W	1.8 MHz	1800 pF	2.0×10-13 W/Hz1/2	Metal
G12182-203K	InGaAs PIN photodiode	0.9 to 2.05 μm	1.95 μm	φ0.3 mm	1.2 A/W	150 MHz	20 pF	1.0×10-14 W/Hz1/2	Metal
G12182-205K	InGaAs PIN photodiode	0.9 to 2.05 μm	1.95 μm	φ0.5 mm	1.2 A/W	53 MHz	60 pF	2.0×10-14 W/Hz1/2	Metal
G12182-210K	InGaAs PIN photodiode	0.9 to 2.05 μm	1.95 μm	φ1.0 mm	1.2 A/W	17 MHz	195 pF	4.0×10-14 W/Hz1/2	Metal
G12182-220K	InGaAs PIN photodiode	0.9 to 2.05 μm	1.95 μm	φ2.0 mm	1.2 A/W	3.7 MHz	850 pF	9.0×10-14 W/Hz1/2	Metal
G12182-230K	InGaAs PIN photodiode	0.9 to 2.05 μm	1.95 μm	φ3.0 mm	1.2 A/W	1.9 MHz	1700 pF	1.5×10-13 W/Hz1/2	Metal
G12183-003K	InGaAs PIN photodiode	0.9 to 2.6 μm	2.3 μm	φ0.3 mm	1.3 A/W	50 MHz	50 pF	4×10-13 W/Hz1/2	Metal
G12183-005K	InGaAs PIN photodiode	0.9 to 2.6 μm	2.3 μm	φ0.5 mm	1.3 A/W	20 MHz	140 pF	5×10-13 W/Hz1/2	Metal
G12183-010K	InGaAs PIN photodiode	0.9 to 2.6 μm	2.3 μm	φ1.0 mm	1.3 A/W	6 MHz	500 pF	1×10-12 W/Hz1/2	Metal
G12183-020K	InGaAs PIN photodiode	0.9 to 2.6 μm	2.3 μm	φ2.0 mm	1.3 A/W	1.5 MHz	1800 pF	2×10-12 W/Hz1/2	Metal
G12183-030K	InGaAs PIN photodiode	0.9 to 2.6 μm	2.3 μm	φ3.0 mm	1.3 A/W	0.8 MHz	4000 pF	3×10-12 W/Hz1/2	Metal
G12183-103K	InGaAs PIN photodiode	0.9 to 2.57 μm	2.3 μm	φ0.3 mm	1.3 A/W	70 MHz	44 pF	1×10-13 W/Hz1/2	Metal
G12183-105K	InGaAs PIN photodiode	0.9 to 2.57 μm	2.3 μm	φ0.5 mm	1.3 A/W	25 MHz	120 pF	1.5×10-13 W/Hz1/2	Metal
G12183-110K	InGaAs PIN photodiode	0.9 to 2.57 μm	2.3 μm	φ1.0 mm	1.3 A/W	7 MHz	440 pF	2.5×10-13 W/Hz1/2	Metal
G12183-120K	InGaAs PIN photodiode	0.9 to 2.57 μm	2.3 μm	φ2.0 mm	1.3 A/W	2 MHz	1500 pF	5.5×10-13 W/Hz1/2	Metal
G12183-130K	InGaAs PIN photodiode	0.9 to 2.57 μm	2.3 μm	φ3.0 mm	1.3 A/W	0.9 MHz	3400 pF	8.5×10-13 W/Hz1/2	Metal
G12183-203K	InGaAs PIN photodiode	0.9 to 2.55 μm	2.3 μm	φ0.3 mm	1.3 A/W	75 MHz	40 pF	7×10-14 W/Hz1/2	Metal
G12183-205K	InGaAs PIN photodiode	0.9 to 2.55 μm	2.3 μm	φ0.5 mm	1.3 A/W	28 MHz	110 pF	1×10-13 W/Hz1/2	Metal
G12183-210K	InGaAs PIN photodiode	0.9 to 2.55 μm	2.3 μm	φ1.0 mm	1.3 A/W	8 MHz	400 pF	2×10-13 W/Hz1/2	Metal
G12183-220K	InGaAs PIN photodiode	0.9 to 2.55 μm	2.3 μm	φ2.0 mm	1.3 A/W	2.3 MHz	1400 pF	4×10-13 W/Hz1/2	Metal
G12183-230K	InGaAs PIN photodiode	0.9 to 2.55 μm	2.3 μm	φ3.0 mm	1.3 A/W	1 MHz	3200 pF	6×10-13 W/Hz1/2	Metal
G13176-003P	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.3 mm	1 A/W	600 MHz	5 pF	5×10-15 W/Hz1/2	Plastic
G13176-010P	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ1.0 mm	1 A/W	60 MHz	55 pF	1.4×10-14 W/Hz1/2	Plastic
G6854-01	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ0.08 mm	0.95 A/W	2000 MHz	1 pF	2×10-15 W/Hz1/2	Metal
G8195-11	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	--	0.95 A/W	2000 MHz	1 pF	--	Pigtail
G8195-12	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	--	0.95 A/W	2000 MHz	1 pF	--	Pigtail
G8370-10	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ10.0 mm	1 A/W	0.1 MHz	20000 pF	6×10-13 W/Hz1/2	Ceramic
G8370-81	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ1.0 mm	1.1 A/W	35 MHz	90 pF	2×10-14 W/Hz1/2	Metal
G8370-82	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ2.0 mm	1.1 A/W	4 MHz	550 pF	4×10-14 W/Hz1/2	Metal
G8370-83	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ3.0 mm	1.1 A/W	2 MHz	1000 pF	6×10-14 W/Hz1/2	Metal
G8370-85	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	φ5.0 mm	1.1 A/W	0.6 MHz	3500 pF	1×10-13 W/Hz1/2	Metal
G9801-22	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	--	0.95 A/W	2000 MHz	1 pF	--	Receptacle
G9801-32	InGaAs PIN photodiode	0.9 to 1.7 μm	1.55 μm	--	0.95 A/W	2000 MHz	1 pF	--	Receptacle
G9820	InGaAs PIN photodiode with preamp	--	--	--	--	--	--	--	Metal
G9820-02	InGaAs PIN photodiode with preamp	--	--	--	--	--	--	--	Metal
G9821-32	InGaAs PIN photodiode with preamp	--	--	--	--	2100 MHz	--	--	Receptacle
G9822-11	InGaAs PIN photodiode with preamp	--	--	--	--	2100 MHz	--	--	Pigtail
G9822-12	InGaAs PIN photodiode with preamp	--	--	--	--	2100 MHz	--	--	Pigtail
G9821-22	InGaAs PIN photodiode with preamp	--	--	--	--	2100 MHz	--	--	Receptacle

InGaAs photodiode arrays

InGaAs photodiode arrays

InGaAs linear arrays and segmented-type photodiodes.

Linear InGaAs photodiode arrays

One-dimensional linear arrays with equally spaced photosensors. Sensitive to near-infrared wavelengths.

Part No	Product Name	Pixel size/element	Number of elements	Cooling	Spectral response range	Peak sensitivity wavelength (typ.)	Photosensitivity (typ.)	Dark current (max.)	Terminal capacitance (typ.)
G7150-16	InGaAs PIN photodiode array	0.45 x 1 mm	16	Non-cooled	0.9 to 1.7 μm	1.55 μm	0.95 A/W	25 nA	100 pF
G7151-16	InGaAs PIN photodiode array	0.08 x 0.2 mm	16	Non-cooled	0.9 to 1.7 μm	1.55 μm	0.95 A/W	1 nA	10 pF
G8909-01	InGaAs PIN photodiode array	φ0.08 mm	40	Non-cooled	0.9 to 1.7 μm	1.55 μm	0.95 A/W	0.2 nA	1.4 pF
G12430-016D	InGaAs PIN photodiode array	0.45 x 1 mm	16	Non-cooled	0.9 to 1.7 μm	1.55 μm	0.95 A/W	2.5 nA	60 pF
G12430-032D	InGaAs PIN photodiode array	0.2 x 1 mm	32	Non-cooled	0.9 to 1.7 μm	1.55 μm	0.95 A/W	1.25 nA	35 pF
G12430-046D	InGaAs PIN photodiode array	0.2 x 1 mm	46	Non-cooled	0.9 to 1.7 μm	1.55 μm	0.95 A/W	1.25 nA	35 pF

Segmented InGaAs photodiodes

4-segmented InGaAs PIN photodiodes sensitive in the near-infrared region. The photosensitive area is divided in two dimensions. Suitable for applications such as laser optical axis alignment.

Hamamatsu InGaAs PIN photodiode G6849

Hamamatsu InGaAs PIN photodiode G6849-01

Photodiode modules

Photodiode modules

High-precision photodetectors that integrate a silicon, InGaAs, or InAsSb photodiode and a current-to-voltage amplifier.

Part No
Hamamatsu	C10439-15	Photodiode module	2.4 × 2.4 (Si), φ1 (InGaAs) mm	320 to 2600 nm	940 (Si), 2300 (InGaAs) nm	Analog	Low range: 1 × 106 V/A	Low range: 100000 Hz	±5 to ±12 V
Hamamatsu	C10439-01	Photodiode module	2.4 × 2.4 mm	190 to 1100 nm	960 nm	Analog	Low range: 1 × 107 V/A	Low range: 1000 Hz	±5 to ±12 V
Hamamatsu	C10439-02	Photodiode module	5.8 × 5.8 mm	190 to 1100 nm	960 nm	Analog	Low range: 1 × 107 V/A	Low range: 1000 Hz	±5 to ±12 V
Hamamatsu	C10439-03	Photodiode module	10 × 10 mm	190 to 1100 nm	960 nm	Analog	Low range: 1 × 107 V/A	Low range: 1000 Hz	±5 to ±12 V
Hamamatsu	C10439-07	Photodiode module	2.4 × 2.4 mm	190 to 1100 nm	960 nm	Analog	Low range: 1 × 104 V/A	Low range: 100000 Hz	±5 to ±12 V
Hamamatsu	C10439-08	Photodiode module	5.8 × 5.8 mm	190 to 1100 nm	960 nm	Analog	Low range: 1 × 104 V/A	Low range: 100000 Hz	±5 to ±12 V
Hamamatsu	C10439-09	Photodiode module	10 × 10 mm	190 to 1100 nm	960 nm	Analog	Low range: 1 × 104 V/A	Low range: 100000 Hz	±5 to ±12 V
Hamamatsu	C10439-10	Photodiode module	Φ1 mm	500 to 1700 nm	1550 nm	Analog	Low range: 1 × 104 V/A	Low range: 100000 Hz	±5 to ±12 V
Hamamatsu	C10439-11	Photodiode module	Φ3 mm	500 to 1700 nm	1550 nm	Analog	Low range: 1 × 104 V/A	Low range: 100000 Hz	±5 to ±12 V
Hamamatsu	C10439-14	Photodiode module	0.7 × 0.7 mm	- to 5300 nm	4100 nm	Analog	Low range: 1 × 106 V/A	Low range: 1000 Hz	±5 to ±12 V
Hamamatsu	C10475	Signal processing unit for photodiode module	--	--	--	--	--	--	--

Photosensor amplifiers

Current-to-voltage conversion amplifiers that make our photodiodes easier to use.

Hamamatsu Photosensor amplifier C6386-01

Hamamatsu Photosensor amplifier C8366

Hamamatsu Photosensor amplifier C8366-01

Hamamatsu Photosensor amplifier C9051

Hamamatsu Photosensor amplifier C9329

Optics modules

Modules composed of silicon photodiodes, beam splitters, filters, and a current-to-voltage conversion circuit.

Designed for absorbance measurement requiring high blocking performance and low noise.

Hamamatsu Optics module C13398-02

Hamamatsu Evaluation circuit for optics module C13390

Hamamatsu Optics module C13390

Balanced detectors

These are differential ampliﬁcation type photoelectric conversion modules containing two

Hamamatsu photodiodes with balanced characteristics. Used in applications such as opthalmologic diagnosis.

Hamamatsu Balanced detector C12668-01

Hamamatsu Balanced detector C12668-02

Hamamatsu Balanced detector C12668-03

Hamamatsu Balanced detector C12668-04

Multi-Pixel Photon Counters (MPPCs/SiPMs)

Our Multi-Pixel Photon Counter (MPPC), also known as silicon photomultiplier (SiPM),

is a solid state photomultiplier comprised of a high density matrix of Geiger-mode-operated avalanche photodiodes also known as SPAD (single-photon avalanche photodiode).

These SPADs have high internal gain which enable single photon detection.

The Hamamatsu SiPM features low dark count, high photon detection efficiency, excellent timing resolution,

low bias voltage operation, ruggedness, resistance to excess light, and immunity to magnetic fields. They are well-suited to single photon counting and other ultra-low light applications

MPPCs (SiPMs)/MPPC arrays

Single MPPCs (SiPMs) and multi-channel MPPCs

MPPC S14160 series

The S14160 series is a small-pixel MPPC that features wide dynamic range.

It employs minute pixels (10 µm, 15 µm) and provides low crosstalk, low dark count, and high fill factor.

MPPC -1310PS series
MPPC -1315PS series
MPPC -3010PS series
MPPC3015PS series

MPPC S14160/S14161 series

The S14160/S14161 series are MPPCs that feature high detection efficiency and low operating voltage for radiation monitors and

PET scanners. The dead space between channels has been reduced, and the space around the

photosensitive area has been reduced to 0.2 mm from the edges. The shape is suitable for four-side buttable tiling

MPPC S13360/S13362 series

These MPPCs are for precision measurement featuring high photon detection efficiency as well as low crosstalk,

low afterpulses, and low dark count.

MPPC S13615/S13360/S13361 series

These MPPCs are for precision measurement employing a TSV structure.

These are suitable for multi-channel placement with tiling

S13615 series

S13360-VE series

S13361-2050 series

S13361-3050 series

S13361-6050 series

MPPC S14420/S14422 series

These MPPCs features high photon detection efficiency in the visible to near infrared regions.

The lineup includes uncooled type S14420 series and the cooling type S14422 series.

S14420 series

S14422 series

MPPC S13720 series

LiDAR

The S13720 series is an MPPC with high sensitivity in the near infrared region that is used in LiDAR.

Hamamatsu MPPC power supplies & driver circuits

Power supplies and driver circuits for MPPCs. Power supplies have a built-in temperature compensation function to stabilize

MPPC operation in environments with fluctuating temperatures

Hamamatsu Power supply for MPPC C14156

Hamamatsu Power supply for MPPC C11204-01

Hamamatsu Power supply for MPPC C11204-02

Hamamatsu Evaluation circuit for MPPC C12332-01

MPPC modules

Modules (SiPM modules) that contain an MPPC capable of detecting extremely low-level light

Part no.	Product name	Built-in sensor	Cooling	Number of channels	Effective photosensitive area/ch	Number of pixels/ch	Pixel pitch	Note
C14452-1550GA	MPPC module	S14422-1550MG	Non-cooled	1 ch	φ1.5 mm	724	50 μｍ	Analog output
C14452-3050GA	MPPC module	S14422-1550MG	Non-cooled	1 ch	φ3 mm	2836	50 μｍ	Analog output
C14455-1550GA	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	φ1.5 mm	724	50 μｍ	Analog output
C14455-1550GD	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	φ1.5 mm	724	50 μｍ	Digital output
C14455-3050GA	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	φ3 mm	2836	50 μｍ	Analog output
C14455-3050GD	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	φ3 mm	2836	50 μｍ	Digital output
C14456-1550GA	MPPC module	S14420-1550DG	TE-cooled	1 ch	φ1.5 mm	724	50 μｍ	Analog output
C14456-1550GD	MPPC module	S14422-1550DG	TE-cooled	1 ch	φ1.5 mm	724	50 μｍ	Digital output
C14456-3050GA	MPPC module	S14422-3050DG	TE-cooled	1 ch	φ3 mm	2836	50 μｍ	Analog output
C14456-3050GD	MPPC module	S14422-3050DG	TE-cooled	1 ch	φ3 mm	2836	50 μｍ	Digital output
C11209-110	MPPC module	S12571-010C	Non-cooled	1 ch	1 x 1 mm	10000	10 μｍ	Analog output
C13365-1350SA	MPPC module	S13360-1350CS	Non-cooled	1 ch	1.3 x 1.3 mm	667	50 μｍ	Analog output
C13365-3050SA	MPPC module	S13360-3050CS	Non-cooled	1 ch	3 x 3 mm	3600	50 μｍ	Analog output
C13366-1350GA	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	1.3 x 1.3 mm	667	50 μｍ	Analog output
C13366-1350GD	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	1.3 x 1.3 mm	667	50 μｍ	Digital output
C13366-3050GA	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	3 x 3 mm	3600	50 μｍ	Analog output
C13366-3050GD	MPPC module	TE-cooled MPPC	TE-cooled	1 ch	3 x 3 mm	3600	50 μｍ	Digital output
C13368-3050EA-16	MPPC module	MPPC array	Non-cooled	16 (1 x 16) ch	3 x 3 mm	3584	50 μｍ	Analog output
C13368-3050ED-16	MPPC module	MPPC array	Non-cooled	16 (1 x 16) ch	3 x 3 mm	3584	50 μｍ	Digital output
C13368-3050EM-16	MPPC module	MPPC array	Non-cooled	16 (1 x 16) ch	3 x 3 mm	3584	50 μｍ	MCA type
C13369-1025GA-04	MPPC module	MPPC array	Non-cooled	16 (4 x 4) ch	1 x 1 mm	1584	25 μｍ	Analog output
C13369-1025GD-04	MPPC module	MPPC array	Non-cooled	16 (4 x 4) ch	1 x 1 mm	1584	25 μｍ	Digital output
C13369-1025GM-04	MPPC module	MPPC array	Non-cooled	16 (4 x 4) ch	1 x 1 mm	1584	25 μｍ	MCA type
C13369-3050EA-04	MPPC module	MPPC array	Non-cooled	16 (4 x 4) ch	3 x 3 mm	3584	50 μｍ	Analog output
C13369-3050ED-04	MPPC module	MPPC array	Non-cooled	16 (4 x 4) ch	3 x 3 mm	3584	50 μｍ	Digital output
C13369-3050EM-04	MPPC module	MPPC array	Non-cooled	16 (4 x 4) ch	3 x 3 mm	3584	50 μｍ	MCA type
C13367-1350EA	MPPC module	MPPC	Non-cooled	1 ch	1.3 x 1.3 mm	667	50 μｍ	Analog output
C13367-3050EA	MPPC module	MPPC	Non-cooled	1 ch	3 x 3 mm	3600	50 μｍ	Analog output
C13367-6050EA	MPPC module	MPPC	Non-cooled	1 ch	6 x 6 mm	14400	50 μｍ	Analog output
C13852-1350GA	MPPC module	S13362-1350DG	TE-cooled	1 ch	1.3 x 1.3 mm	667	50 μｍ	Analog output
C13852-1350GD	MPPC module	S13362-1350DG	TE-cooled	1 ch	1.3 x 1.3 mm	667	50 μｍ	Digital output
C13852-3050GA	MPPC module	S13362-3050DG	TE-cooled	1 ch	3 x 3 mm	3600	50 μｍ	Analog output
C13852-3050GD	MPPC module	S13362-3050DG	TE-cooled	1 ch	3 x 3 mm	3600	50 μｍ	Digital output

Hamamatsu Single-pixel photon counting modules

Photon counting modules integrating our Single-Pixel Photon Counter (SPPC) for low-level light detection. SPPCs are type of single-photon avalanche diode (SPAD).

Part No	Product name	Cooling	Spectral rasponse range (min./max.)	Dark count (typ)	Photon detection efficiency (typ)	Fiber connector	Note
C14463-050GD	Photon counting module	TE-cooled	370 to 1000	0.02 kcps	35 %	FC	Digital output
C11202-050	Photon counting module	TE-cooled	320 to 900	0.007 kcps	70 %	--	Digital output
C11202-100	Photon counting module	TE-cooled	320 to 900	0.03 kcps	70 %	--	Digital output
C13001-01	Photon counting module	TE-cooled	370 to 900	0.007 kcps	45 %	FC	Digital output
C14076-01	Photon counting module	TE-cooled	370 to 900	0.007 kcps	45 %	FC	Fiber coupling type

Hamamatsu Avalanche photodiodes (APDs)

APDs are photodiodes with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than PIN photodiodes, as well as fast time response, low dark current, and high sensitivity

Avalanche photodiodes (APDs)

Si APDs

Silicon APDs provide high sensitivity ranging from UV to NIR for low light detection at high speeds

Part No	Product Name	Photosensitive area	Type	Spectral response range	Peak sensitivy wavelength (typ)	Breakdown voltage (typ)	Temparature coefficient of breakdown voltage (typ)
S14124-20	Si APD	φ2.0 mm	Short wavelength type (low terminal capacitance)	--	600 nm	400 V	0.78 V/℃
S2384	Si APD	φ3 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S2385	Si APD	φ5 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S3884	Si APD	φ1.5 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S5344	Si APD	φ3 mm	Short wavelength type (Low bias operation)	200 to 1000 nm	620 nm	150 V	0.14 V/℃
S5345	Si APD	φ5 mm	Short wavelength type (Low bias operation)	200 to 1000 nm	620 nm	150 V	0.14 V/℃
S6045-04	Si APD	φ1.5 mm	Near infrared type (Low temperature coefficient)	400 to 1000 nm	800 nm	200 V	0.4 V/℃
S6045-05	Si APD	φ3 mm	Near infrared type (Low temperature coefficient)	400 to 1000 nm	800 nm	200 V	0.4 V/℃
S6045-06	Si APD	φ5 mm	Near infrared type (Low temperature coefficient)	400 to 1000 nm	800 nm	200 V	0.4 V/℃
S8664-02K	Si APD	φ0.2 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-05K	Si APD	φ0.5 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-1010	Si APD	10 × 10 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-10K	Si APD	φ1 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-20K	Si APD	φ2 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-30K	Si APD	φ3 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-50K	Si APD	φ5 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8664-55	Si APD	5 × 5 mm	Short wavelength type (low terminal capacitance)	320 to 1000 nm	600 nm	400 V	0.78 V/℃
S8890-02	Si APD	φ0.2 mm	Near infrared type	400 to 1100 nm	940 nm	500 V	3.5 V/℃
S8890-05	Si APD	φ0.5 mm	Near infrared type	400 to 1100 nm	940 nm	500 V	3.5 V/℃
S8890-10	Si APD	φ1 mm	Near infrared type	400 to 1100 nm	940 nm	500 V	3.5 V/℃
S8890-15	Si APD	φ1.5 mm	Near infrared type	400 to 1100 nm	940 nm	500 V	3.5 V/℃
S8890-30	Si APD	φ3 mm	Near infrared type	400 to 1100 nm	940 nm	500 V	3.5 V/℃
S9075	Si APD	φ1.5 mm	Short wavelength type (low bias operation)	200 to 1000 nm	620 nm	150 V	0.14 V/℃
S9251-10	Si APD	φ1 mm	Near infrared type (900 nm band, low terminal capacitance)	440 to 1100 nm	860 nm	250 V	1.85 V/℃
S9251-15	Si APD	φ1.5 mm	Near infrared type (900 nm band, low terminal capacitance)	440 to 1100 nm	860 nm	250 V	1.85 V/℃
S12023-02	Si APD	φ0.2 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S12023-05	Si APD	φ0.5 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S12023-10	Si APD	φ1 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S12023-10A	Si APD	φ1 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S12051	Si APD	φ0.5 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S12053-02	Si APD	φ0.2 mm	Short wavelength type (Low bias operation)	200 to 1000 nm	620 nm	150 V	0.14 V/℃
S12053-05	Si APD	φ0.5 mm	Short wavelength type (Low bias operation)	200 to 1000 nm	620 nm	150 V	0.14 V/℃
S12053-10	Si APD	φ1 mm	Short wavelength type (Low bias operation)	200 to 1000 nm	620 nm	150 V	0.14 V/℃
S12060-02	Si APD	φ0.2 mm	Near infrared type (Low temperature coefficient)	400 to 1000 nm	800 nm	200 V	0.4 V/℃
S12060-05	Si APD	φ0.5 mm	Near infrared type (Low temperature coefficient)	400 to 1000 nm	800 nm	200 V	0.4 V/℃
S12060-10	Si APD	φ1 mm	Near infrared type (Low temperature coefficient)	400 to 1000 nm	800 nm	200 V	0.4 V/℃
S12086	Si APD	φ0.5 mm	Near infrared type (Low bias operation)	400 to 1000 nm	800 nm	150 V	0.65 V/℃
S12092-02	Si APD	φ0.2 mm	Near infrared type (900 nm band, low terminal capacitance)	440 to 1100 nm	860 nm	250 V	1.85 V/℃
S12092-05	Si APD	φ0.5 mm	Near infrared type (900 nm band, low terminal capacitance)	440 to 1100 nm	860 nm	250 V	1.85 V/℃
S12426-02	Si APD	φ0.2 mm	High-speed type (for 900 nm, Low bias operation)	400 to 1100 nm	840 nm	160 V	1.1 V/℃
S12426-05	Si APD	φ0.5 mm	High-speed type (for 900 nm, Low bias operation)	400 to 1100 nm	840 nm	160 V	1.1 V/℃

APD modules

Our modules take the complexity out of operating an APD with a low-noise amplifier circuit, high voltage power supply, and temperature compensation circuit integrated into a compact solution.

Part no.	Product name	Type	Effective photosensitive area	Low Band Cut-off Frequency (typ.)	High Band Cut-off Frequency (typ.)	Photoelectric sensitivity (typ.)	Temperature stability of gain (typ.)	Cooling	Supply voltage (typ.)
C5658	APD module	High-speed type	φ0.5 mm	0.05 MHz	1000 MHz	2.50 × 105 V/W	±5.0 %	Non-cooled	+12.0 V
C10508-01	APD module	High-stability type	φ1.0 mm	DC MHz	10 MHz	1.25 × 107 V/W	±5.0 max. %	Non-cooled	±5 V
C12702-03	APD module	Near infrared type	φ1.0 mm	0.0040 MHz	100 MHz	-6.8 × 104 V/W	±2.5 %	Non-cooled	+5.0 V
C12702-04	APD module	Near infrared type	φ3.0 mm	0.0040 MHz	80 MHz	-2.30 × 104 V/W	±2.5 %	Non-cooled	+5.0 V
C12702-11	APD module	Short wavelength type	φ1.0 mm	0.0040 MHz	100 MHz	-2.5 × 104 V/W	±2.5 %	Non-cooled	+5.0 V
C12702-12	APD module	Short wavelength type	φ3.0 mm	0.0040 MHz	40 MHz	-1.9 × 104 V/W	±2.5 %	Non-cooled	+5.0 V
C12703	APD module	High-sensitivity type	φ1.5 mm	DC MHz	10 MHz	1.50 × 106 V/W	±2.5 %	Non-cooled	±12 V
C12703-01	APD module	High-sensitivity type	φ3.0 mm	DC MHz	0.1 MHz	-1.50 × 108 V/W	±2.5 %	Non-cooled	±12 V

Hamamatsu InGaAs APDs

InGaAs APDs provide high near-infrared sensitivity for low light detection at high speeds.

Hamamatsu InGaAs APD G14858-0020AA

Hamamatsu InGaAs APD G8931-04

Hamamatsu InGaAs APD G8931-10

Hamamatsu InGaAs APD G8931-20

Hamamatsu Si APD arrays

4 × 8 element Si APD array with low noise and enhanced short-wavelength sensitivity

Hamamatsu Si APD array S8550-02

Hamamatsu Photo IC

The photo IC is an intelligent optical sensor with diverse functions and integrates a photodiode with signal processing IC in the same package.

Hamamatsu Photo IC for rangefinders

Photo IC for distance measurement using time-of-flight (TOF).

Hamamatsu Photo IC for rangefinder S13021-01CT

Illuminance sensors

Illuminance sensors combine signal processing circuits and a photodiode with spectral sensitivity close to that of the human eye. Suitable for applications such as energy-saving sensors for TVs or light dimmers for liquid crystal panels and cell phones.

Hamamatsu Light-to-frequency converter photo IC S9705

Hamamatsu Light-to-frequency converter photo IC S9705-01DT

Hamamatsu Photo IC diode S11153-01MT

Hamamatsu Photo IC diode S7183

Hamamatsu Photo IC diode S7184

Hamamatsu Photo IC diode S9066-211SB

Hamamatsu Photo IC diode S9067-201CT

Hamamatsu Photo IC diode S10604-200CT

Hamamatsu Photo IC diode S11154-201CT

Hamamatsu Photo IC diode S13948-01SB

Hamamatsu Photo IC for optical link

Photo IC receivers and emitters for plastic optical fiber communications.

Hamamatsu Transmitter photo IC for optical link L11354-01

Hamamatsu Photo IC for optical link P11379-04AT

Hamamatsu Receiver photo IC for optical link S11355-04

Hamamatsu Red LED for optical link L10881

Hamamatsu Photo IC for optical link L12422-01SR

Hamamatsu Photo IC for optical link L12557-01SR

Hamamatsu Receiver photo IC for optical link S7141-10

Hamamatsu Receiver photo IC for optical link S7727

Hamamatsu Receiver photo IC for optical link S8046

Hamamatsu Photo IC for optical link S12423-01SR

Hamamatsu Photo IC for laser beam synchronous detection

These photo ICs detect laser beam printing start timing in laser beam printers and digital copiers

Hamamatsu S11257-01DT Photo IC for laser beam synchronous detection

Hamamatsu S11257-02DT Photo IC for laser beam synchronous detection

Hamamatsu S11282-01DS Photo IC for laser beam synchronous detection

Hamamatsu S9684 Photo IC for laser beam synchronous detection

Hamamatsu S9684-01 Photo IC for laser beam synchronous detection

Hamamatsu S9703-11 Photo IC for laser beam synchronous detection

Hamamatsu S10317 Photo IC for laser beam synchronous detection

Hamamatsu S10317-01 Photo IC for laser beam synchronous detection

Hamamatsu Photosensor with front-end IC

Devices that integrate a photosensor, such as a photodiode or avalanche photodiode (APD), and front-end integrated circuit (IC) that reads the signals from the photosensor. Suitable for rangefinders because of their excellent noise and frequency characteristics.

Hamamatsu Photosensor with front-end IC S14137-01CR

Hamamatsu Photosensor with front-end IC S14847-01CR

Hamamatsu Photosensor with front-end IC S13282-01CR

Hamamatsu Photosensor with front-end IC S13645-01CR

Hamamatsu Schmitt trigger circuit photo IC

These devices integrate a photodiode, amplifier, Schmitt trigger circuit, and output phototransistor into a single chip. Their peak sensitivity is 850 nm, making them suitable for applications such as optical switches and rotary encoders.

Hamamatsu Schmitt trigger circuit photo IC S12558-02DT

Hamamatsu Schmitt trigger circuit photo IC S4810

Hamamatsu Schmitt trigger circuit photo IC S6289

Hamamatsu Schmitt trigger circuit photo IC S7610-10

Hamamatsu Schmitt trigger circuit photo IC S12558-01DT

Hamamatsu Photo IC devices for encoders

These are a photo IC and photo IC module for encoders.

Hamamatsu Photo IC for encoder

Photo IC having two pairs of monolithic photodiodes. Two-phase digital output makes it easier to configure optical encoders

Hamamatsu Photo IC for encoder S4506

Hamamatsu Encoder modules

An interrupter-type encoder module consisting of a photo IC sensor and red LED

Hamamatsu Encoder module P11159-201AS

Hamamatsu Photo IC assemblies for flame detection

Photo IC sensors designed specifically for flame detection (flame eye) in oil-fired hot water boilers and heaters. Since they don’t use conventional CdS cells, these products are RoHS compliant.

Hamamatsu Photo IC diode assembly S10108

Hamamatsu Photo IC diode assembly S10109

Hamamatsu Color sensors

Devices sensitive in the red, green, and blue spectral regions.

Hamamatsu RGB color sensors

Color sensors molded into plastic packages, with 3-channel photodiodes sensitive to the red, green, and blue (RGB) regions of the spectrum

Manufacturer	Part No	Product Name	Product Type
Hamamatsu	S13683-03DT	I2C interface-compatible color sensor	RGB digital color sensor
Hamamatsu	S13683-04DS	I2C interface-compatible color sensor	RGB digital color sensor
Hamamatsu	S9706	Color sensor	RGB digital color sensor
Hamamatsu	S10917-35GT	RGB Color Sensor	RGB photodiode
Hamamatsu	S10942-01CT	RGB Color Sensor	RGB photodiode
Hamamatsu	S11012-01CR	Color sensor	RGB digital color sensor
Hamamatsu	S7505-01	RGB Color Sensor	RGB photodiode
Hamamatsu	S9032-02	RGB Color Sensor	RGB photodiode
Hamamatsu	S9702	RGB Color Sensor	RGB photodiode
Hamamatsu	S13683-02WT	I2C interface-compatible color sensor	RGB digital color sensor

Hamamatsu Color sensor circuits

Driver circuit boards for color sensor evaluation

Hamamatsu Color sensor evaluation circuit C9331

Hamamatsu Monochromatic color detectors

Color sensors designed to detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm), or red (λp=660 nm)

Hamamatsu Si photodiode S6428-01

Hamamatsu Si photodiode S6429-01

Hamamatsu Si photodiode S6430-01

Hamamatsu Color sensor modules

Modules consisting of an RGB color sensor and an amplifier mounted on a small circuit board.

Hamamatsu Color sensor module C9303-03

Hamamatsu Color sensor module C9303-04

Hamamatsu Mini-spectrometers

Mini-spectrometers are compact and low cost spectrometers (polychromators). We offer over 20 different types of mini-spectrometers covering the spectral range from UV to NIR. Suitable for applications such as environmental measurement, color measurement, quality control in production lines, and information devices.

Hamamatsu Mini-spectrometer TF series C14214MA

Hamamatsu Mini-spectrometer TG series C9405CC

Hamamatsu Mini-spectrometer MS series C10988MA-01

Hamamatsu Mini-spectrometer MS series C11708MA

Hamamatsu Mini-spectrometer micro series C12880MA

Hamamatsu Mini-spectrometer TF series C13053MA

Hamamatsu Mini-spectrometer TF series C13054MA

Hamamatsu Mini-spectrometer TF series C13555MA

Hamamatsu Mini-spectrometer SMD series C14384MA-01

Hamamatsu Mini-spectrometer TF series C14486GA

Hamamatsu Mini-spectrometer TG series C9404CA

Hamamatsu Mini-spectrometer TG series C9404CAH

Hamamatsu Mini-spectrometer TG series C9913GC

Hamamatsu Mini-spectrometer TG series C9914GB

Hamamatsu Mini-spectrometer TM series C10082CA

Hamamatsu Mini-spectrometer TM series C10082CAH

Hamamatsu Mini-spectrometer TM series C10082MD

Hamamatsu Mini-spectrometer TM series C10083CA

Hamamatsu Mini-spectrometer TM series C10083CAH

Hamamatsu Mini-spectrometer RC series C11007MA

Hamamatsu Mini-spectrometer RC series C11008MA

Hamamatsu Mini-spectrometer RC series C11009MA

Hamamatsu Mini-spectrometer RC series C11010MA

Hamamatsu Mini-spectrometer TG series C11118GA

Hamamatsu Mini-spectrometer RC series C11482GA

Hamamatsu Mini-spectrometer TM series C11697MB

Hamamatsu Mini-spectrometer TG series C11713CA

Hamamatsu MEMS-FPI spectroscopic module

Spectroscopic module is a compact module integrating with MEMS-FPI spectrum sensor and light source. Spectrum and absorbance can be measured by connecting a PC via USB.

Hamamatsu MEMS-FPI spectroscopic module C15712

Hamamatsu MEMS-FPI spectroscopic module C15713

Hamamatsu MEMS-FPI spectroscopic module C15714

Hamamatsu Multichannel spectral system

Real time multichannel spectrometers.

Hamamatsu PMA-12 Photonic multichannel analyzer

Compact multichannel analyzer consists of a spectrograph and a high sensitivity detector in one package. Various models are available to accommodate a wide range of spectrum and sensitivity requirements

Hamamatsu PMA-12 Photonic multichannel analyzer

The PMA-12 is compact spectral measurement apparatus that combines a spectrometer and optical detector into one unit.
An optical fiber is used. Because of the high sensitivity, spectra can be obtained easily just by bringing the optical fiber close to the sample in normal applications, without a special light collection system. Since the spectrometer and photo-detector are fixed, the PMA-12 is stable and can be used with confidence for long periods of time. The wavelength axis and spectral response characteristics are already calibrated, so spectral measurements can be carried out easily and accurately.

Hamamatsu PMA-12 Photonic multichannel analyzer: C14880-01

Low stray light model
Wavelength: 200 nm to 990 nm
USB 3.0

This model realizes low stray light and enables highly accurate spectrum analysis by reviewing the optical layout.

Hamamatsu PMA-12 Photonic multichannel analyzer: C14631-01

High sensitivity superior cost-performance model
Wavelength: 300 nm to 800 nm

The C14631, which has the thermoelectric cooling type as BT- CCD linear image sensor used for astronomical observation, realizes both high performance and low price by rational design.

Hamamatsu PMA-12 Photonic multichannel analyzer: C14631-02

High sensitivity superior cost-performance model
Wavelength: 250 nm to 840 nm

The C14631, which has the thermoelectric cooling type as BT- CCD linear image sensor used for astronomical observation, realizes both high performance and low price by rational design.

Hamamatsu PMA-12 Photonic multichannel analyzer: C14631-03

High sensitivity superior cost-performance model
Wavelength: 300 nm to 1040 nm

The C14631, which has the thermoelectric cooling type as BT- CCD linear image sensor used for astronomical observation, realizes both high performance and low price by rational design.

Hamamatsu PMA-12 Photonic multichannel analyzer: C10027-01

Ultrahigh sensitivity model
Wavelength: 200 nm to 950 nm

This model uses a thermoelectrically cooled, back-thinned CCD linearimage sensor that with higher sensitivity and lower noise.

Hamamatsu PMA-12 Photonic multichannel analyzer: C10027-02

Ultrahigh sensitivity model
Wavelength: 350 nm to 1100 nm

This model uses a thermoelectrically cooled, back-thinned CCD linearimage sensor that with higher sensitivity and lower noise.

Hamamatsu PMA-12 Photonic multichannel analyzer: C10028-01

Near infrared model
Wavelength: 900 nm to 1650 nm

These are models using InGaAs linear image sensors and capable of measurements of reflection and absorption spectra in the near infrared with a large dynamic range.

Hamamatsu PMA-12 Photonic multichannel analyzer: C10028-02

Near infrared model
Wavelength: 1600 nm to 2350 nm

These are models using InGaAs linear image sensors and capable ofmeasurements of reflection and absorption spectra in the near infraredwith a large dynamic range.

Hamamatsu PMA-12 Photonic multichannel analyzer: C10029-01

High time resolution model
Wavelength: 200 nm to 860 nm

Coupling an image intensifier with a thermoelectrically cooled, back-thinned CCD linear image sensor, it is possible to have both high-speed gate measurements at a maximum of 10 ns and ultra-high sensitivity.

Hamamatsu Fluorescence lifetime / transient absorption analysis system

Measurement systems of multispectrum kinetic changes at high sensitivity and high time resolution.

Hamamatsu Quantaurus-Tau Fluorescence lifetime spectrometer

Quantaurus-Tau is a compact system for measuring fluorescence lifetimes in the sub nanosecond to millisecond range.
Operation is simple, just set the sample into the sample chamber, and enter a few conditions on the measurement software to measure the fluorescence lifetime and PL spectrum in a short time with high precision. In a typical measurement, analysis results are obtained in a mere 60 seconds.

Hamamatsu Quantaurus-Tau Fluorescence lifetime spectrometer: C11367-31

Standard type

Standard model. (Sample: Solution・Thin-film, Wavelength range: 300 nm to 800 nm)

Hamamatsu Quantaurus-Tau Fluorescence lifetime spectrometer: C11367-32

NIR type

NIR model. (Sample: Solution・Thin-film, Wavelength range: 380 nm to 1030 nm)

Hamamatsu Quantaurus-Tau Fluorescence lifetime spectrometer: C11367-34

Standard type

Standard model. (Sample: Solid (Thin-film・Powder), Wavelength range: 300 nm to 800 nm)

Hamamatsu Quantaurus-Tau Fluorescence lifetime spectrometer: C11367-35

NIR type

NIR model. (Sample: Solid (Thin-film・Powder), Wavelength range: 380 nm to 1030 nm)

Hamamatsu Time-resolved absorption spectrum analysis system

The time-resolved absorption spectrum analysis system is a device to perform transient absorption spectrum measurements in extremely short time.
This system enables to analyze the formation and decay process of a reactive intermediate in a photoreaction in solutions, solids, membranes, etc are possible. By using the streak camera as the detector and performing multiple-wavelengths time-resolved measurements with a single shot, time-resolved absorption spectra and transient absorption time-resolved spectral images can be measured simultaneously, and you can obtain images of irreversible phenomenon.

Hamamatsu Time-resolved absorption spectrum analysis system: Nanosecond system

For nanosecond range

Time-resolved absorption spectrum analysis system for nanosecond range with time resolution of 7 ns at measurement time from 20 ns to 1 ms.

Hamamatsu Time-resolved absorption spectrum analysis system: Picosecond system

For picosecond range

Time-resolved absorption spectrum analysis system for picosecond range with time resolution of 70 ps at measurement time from 0.5 ns to 20 ms.

Hamamatsu Picosecond fluorescence lifetime measurement system

Picosecond fluorescence lifetime measurement system has been developed in response to the requirements of researchers studying such materials. The use of a ''streak camera'', an optical transient recorder with picosecond time response, makes ultra-fast time-resolved spectrophotometry a reality. The use of streak camera technology allows detection sensitivities in the photon counting region. For simultaneous wavelength and time measurements, a spectrometer can be added to the system. Measurement parameters such as wavelength and time settings are controlled by a computer for simplified laboratory use.

Hamamatsu Picosecond fluorescence lifetime measurement system: C11200

5 ps temporal resolution
Simultaneous multi-wavelength measurement

The Hamamatsu Picosecond fluorescence lifetime measurement system has been developed in response to the requirements of researchers studying such materials.

Hamamatsu Flash photolysis system

The flash photolysis system can perform transient absorption measurements within the short nanosecond range.
The absorption spectrum of the formation and decay process of intermediaries in photoreactions such as photodissociation, photoisomerization reaction, etc can be observed. Due to the newly developed software added with the adoption of the optics, transient absorption spectrum measurements in the nanosecond range have been made easier.

Hamamatsu Flash photolysis system

ns to ms
Transient absorption

Flash photolysis system to perform transient absorption spectrum measurements

The flash photolysis system can perform transient absorption measurements within the short nanosecond range. The absorption spectrum of the formation and decay process of intermediaries in photoreactions such as photodissociation, photoisomerization reaction, etc can be observed. Due to the newly developed software added with the adoption of the optics, transient absorption spectrum measurements in the nanosecond range have been made easier.

Hamamatsu Compact NIR PL lifetime spectrometer

The compact NIR PL lifetime spectrometer C12132 series is designed for measuring photoluminescence (PL) spectrum and PL lifetime in the NIR region. Applicable to measure PL lifetime and PL spectrum of material which is related to the conversion efficiency of solar cell, PL lifetime of organic compound and PL spectrum of singlet oxygen.

Hamamatsu Compact NIR PL lifetime spectrometer: C12132-36

Laser class 1 model
580 nm to 1650 nm

Complies with laser class 1. It can be used outside of a laser controlled area.

Hamamatsu Compact NIR PL lifetime spectrometer: C12132-37

Laser class 3B model
580 nm to 1650 nm

Complies with laser class 3B. It is upgradable for multipoint measurement with optical fibers.

Hamamatsu Compact NIR PL lifetime spectrometer: C12132-38

Uses an external laser
380 nm to 1650 nm

Uses an external laser as the excitation light source. Adding the PLP-10 laser diode head as an excitation light source is anoption.

Hamamatsu Image sensors

We offer over 200 standard linear and area image sensors covering the short wavelength infrared (SWIR), near infrared (NIR), visible (VIS), ultraviolet (UV), and X-ray regions. With a broad selection from high speed, high sensitivity to wide dynamic range, our image sensors are suitable for different applications including spectroscopy analysis using spectrometers, industrial imaging such as machine vision cameras, microscopy, and distance measurements. We also provide supporting electronics such as easy-to-use driver circuits for sensor evaluation and driver modules for OEMs. Customizations are available for specific applications and requirements.

Hamamatsu CCD / CMOS / NMOS image sensors

CCD/CMOS/NMOS image sensors for UV-VIS-NIR used for semiconductors, analytical instrumentation, spectroscopy applications and color measurement.

Line sensors
Area sensors

Hamamatsu InGaAs image sensors

Hamamatsu provides InGaAs image sensor options covering the visible (VIS), near infrared (NIR), and short wavelength infrared (SWIR) regions, and they have a built-in CMOS IC, allowing easy operation.

Line sensors
Area sensors

Hamamatsu X-ray image sensors

These are CCD/CMOS/NMOS image sensor for X-ray detection.

Line sensors
Area image sensors

Hamamatsu X-ray flat panel sensors

X-ray flat panel sensors that combine a large-area CMOS image sensor and a fiber optic plate with scintillator (FOS). Can acquire high-definition, megapixel-level digital video and still images without distortion. Easy to install into other equipment.

X-ray flat panel sensors for radiology
X-ray flat panel sensors for nondestructive inspection

Hamamatsu Distance image sensors

Image sensors designed to measure distance to an object by the time-of-flight (TOF) method.

Hamamatsu Si photodiode arrays with amplifier

Silicon photodiode arrays combined with signal processing integrated circuits (IC). 64-256 ch arrays with or without scintillators. Driver circuits available for easy implementation.

Hamamatsu Image sensor circuits & accessories

Driver circuits and multi-channel detector heads to use with the associated data acquisition software for plug-and-play sensor characterization.

Driver circuits for CCD image sensors
Driver circuits for CMOS image sensors
Driver circuits for NMOS image sensors
Driver circuits for InGaAs image sensors
Driver circuits for photodiode array with amplifier
Multichannel detector head controllers

Hamamatsu Image intensifiers (IIs)

IIs produce high-contrast images under dark conditions. Suitable for night-time surveillance, as well as for scientific and technical research.

Hamamatsu Image intensifier (II) units

High-speed gated II units use gate (or shutter) operation to capture instantaneous images of high-speed phenomena occurring within extremely short time durations.

HAMAMATSU PHOTONICS

Colour sensor

Man Pt. No.: S9706

Manufacturer: Hamamatsu

IR phototransistor 850 nm 35 V

Man Pt. No.: S2829

Manufacturer: Hamamatsu

Light sensor, 0.07 ms, 2.2...7 V Digital Output

Man Pt. No.: S4810

Manufacturer: Hamamatsu

Gas sensor

Man Pt. No.: T11262-01

Manufacturer: Hamamatsu

Line sensor

Man Pt. No.: S10077

Manufacturer: Hamamatsu

Colour sensor

Man Pt. No.: S9702

Manufacturer: Hamamatsu

Line sensor

Man Pt. No.: S9226-03

Manufacturer: Hamamatsu

IR-LED 870 nm

Man Pt. No.: L 8957

Manufacturer: Hamamatsu

IR-LED 880 nm

Man Pt. No.: L 2791-02

Manufacturer: Hamamatsu

Ambient light sensor 560 nm

Man Pt. No.: S13948-01SB
Manufacturer: Hamamatsu

IR-photodiode 800nm, TO-18

Man Pt. No.: S12023-02

Manufacturer: Hamamatsu

IR-LED 940 nm

Man Pt. No.: L 5586

Manufacturer: Hamamatsu

IR-photodiode 960nm,

Man Pt. No.: S1337-66BR

Manufacturer: Hamamatsu

IR-photodiode 960nm, TO-18

Man Pt. No.: S1336-18BQ

Manufacturer: Hamamatsu

IR-photodiode 800nm, TO-18

Man Pt. No.: S2381
Manufacturer: Hamamatsu

IR-LED 900 nm Bullet Type

Man Pt. No.: L12170

Manufacturer: Hamamatsu

Light sensor, 4.5...12 V Light Modulation

Man Pt. No.: S4282-51

Manufacturer: Hamamatsu

Light sensor, 4.5...12 V Light Modulation

Man Pt. No.: S6846

Manufacturer: Hamamatsu

Light sensor, 4.5...12 V Light Modulation

Man Pt. No.: S7136

Manufacturer: Hamamatsu

Light sensor, 4.5...12 V Light Modulation

Man Pt. No.: S7136-10

Manufacturer: Hamamatsu

Light sensor, 0.15 nA, 1.5 ms Position Sensitive

Man Pt. No.: S3931

Manufacturer: Hamamatsu

Hamamatsu C12880MA u-Spectrometer

Man Pt. No.: 114991292

Manufacturer: Seeed Studio

IR-LED 940 nm

Man Pt. No.: L 6286

Manufacturer: Hamamatsu

Ambient light sensor 560 nm Radial

Man Pt. No.: S9648-100

Manufacturer: Hamamatsu

IR-photodiode 760nm, Radial

Man Pt. No.: S10784

Manufacturer: Hamamatsu

Ambient light sensor 560 nm Reel, SIP

Man Pt. No.: S9066-211SB

Manufacturer: Hamamatsu

CMOS linear image sensor

Man Pt. No: S15611

Manufacturer: Hamamatsu

40 MHz operation, digital output

The S15611 is a CMOS linear image sensor that has achieved a readout speed of 40 MHz max. and a line rate of 34 kHz max.

The image sensor has a timing generator, bias generator, 12-bit A/D converter, and is easy to handle because of its digital I/O.

CMOS linear image sensor

Man Pt. No: S10226-10

Manufacturer: Hamamatsu

Small, resin-sealed CMOS image sensor

Features
-Compact and high cost-performance
-Pixel pitch: 7.8 μm Pixel height: 125 μm
-1024 pixels
-Single 3.3 V power supply operation
-High sensitivity, low dark current, low noise
-On-chip charge amplifier with excellent input/output characteristics
-Built-in timing generator allows operation with only Start and Clock pulse inputs
-Video data rate: 200 kHz max.
-Spectral response range: 400 to 1000 nm

Photomultiplier tube

Manufacturer: Hamamatsu

Man Pt. No: R6237-01

76 x 76 mm Rectangular, Head-on type, Bialkali photocathode, Spectral response : 300 to 650 nm), for Gamma camera, Semiflexible lead type of R6237

Hamamatsu Multıanode Photomultıplıer Tube Assembly H12700A

64ch multianode PMT assembly H12700A

52 x 52 mm PMT assembly, Built-in PMT : R12699-00-M64
H12700A series / H14220A : Cable input type
H12700B series / H14220B : Connector input type

H12700A / H12700A-10 : 300 nm to 650 nm
H12700A-03 : 185 nm to 650 nm
H14220A : 300 nm to 700 nm

Hamamatsu Multıanode Photomultıplıer Tube H14220A
64ch multianode PMT assembly
H14220A

52 x 52 mm PMT assembly, Built-in PMT : R14219
H12700A series / H14220A : Cable input type
H12700B series / H14220B : Connector input type

H12700A / H12700A-10 : 300 nm to 650 nm
H12700A-03 : 185 nm to 650 nm
H14220A : 300 nm to 700 nm

Hamamatsu Pulsed Laser Diode L11854-307-05
Hamamatsu Pulsed Laser Diode L11854-307-55
Hamamatsu Pulsed Laser Diode L11854-336-05
Hamamatsu Pulsed Laser Diode L11854-323-51
Hamamatsu Laser Dıode TL90AT08

Hamamatsu L2273 Xenon Lamp

Hamamatsu L2174-01 Xenon Lamp

Hamamatsu Photosensor Module Wıth Pmt H11902-04

Hamamatsu Cameras

Hamamatsu qCMOS cameras

Qcmos Camera C15550-20UP

The world's first camera to incorporate the qCMOS image sensor.

ORCA-Quest qCMOS camera: C15550-20UP

The C15550-20UP is the world's first camera to incorporate the qCMOS image sensor. The camera achieves the ultimate in quantitative imaging.

C15550-20UP Catalog

Hamamatsu CMOS cameras

A measurement camera which incorporates a CMOS sensor for scientific research use.

ORCA-Fire Digital CMOS camera C16240-20UP

The ORCA-Fire intelligently integrates all the essential elements of a high performance, back-thinned, scientific CMOS (sCMOS) camera.

ORCA-Flash4.0 LT3 Digital CMOS camera: C11440-42U40

The ORCA-Flash4.0 LT3 is a new scientific CMOS camera for fluorescence imaging, which has been improved from the ORCA-Flash 4.0 released in

ORCA-Lightning Digital CMOS camera: C14120-20P

Compared to a Gen II sCMOS, the ORCA-Lightning delivers 2 times the pixel area, 2.8 times the pixels and 3.4 times faster pixel-per-second readout.

ORCA-Fusion Digital CMOS camera: C14440-20UP

The ORCA-Fusion, built from the sensor up, balances the complex nuances of camera features to provide beautiful images and robust data at all lights levels, but especially in tough low-light conditions.

ORCA-Fusion BT Digital CMOS camera: C15440-20UP

The ORCA-Fusion BT camera is the pinnacle of scientific CMOS (sCMOS) performance. The specifications are without compromise: ultra-low readout noise, CCD-like uniformity, fast frame rates and back-thinned enabled high QE.

ORCA-spark Digital CMOS camera: C11440-36U

The ORCA-spark is a high-sensitivity digital CMOS camera using a 2.3 megapixel CMOS sensor.

ORCA-Flash4.0 V3 Digital CMOS camera: C13440-20CU

Digital CMOS camera with sCMOS sensor designed for scientific research use. It has improved resolution and sensitivity (especially in NIR region) comparing with ORCA-Flash4.0. (82 % peak QE)

Hamamatsu CCD cameras

A measurement camera which incorporates a high-sensitive CCD sensor.

ORCA Ⅱ Digital CCD camera: C11090-22B

Digital CCD

Wide spectral sensitive (UV to NIR) back-thinned CCD digital camera. Peltier cooling reduces dark current, and it allows to have long exposure

Hamamatsu EM-CCD cameras

A measurement camera which incorporates a EM-CCD sensor.

ImagEM X2 EM-CCD camera: C9100-23B

Electron Multiplying CCD camera with back-thinned type EM-CCD. The heavy cooled (-100 ℃) high sensitive camera realizes 512×512 pixel read out speed of 70 frames second

ImagEM X2-1K EM-CCD camera: C9100-24B

Electron Multiplying CCD camera with back-thinned type EM-CCD. The heavy cooled (-80 ℃) high sensitive camera realizes 1024×1024 pixel read out speed of 18.5 frames second.

Hamamatsu InGaAs cameras

A measurement camera which incorporates a InGaAs sensor for measurement near-infrared wavelength.

InGaAs line scan camera: C15333-10E

950 nm - 1700 nm
GigE Vision

Infrared sensitive InGaAs camera with detection range from 950 nm to 1700 nm. It supports in-line non-destructive inspection in real time.
In addition, it employs Gigabit Ethernet interfaces and it supports GigE Vision

InGaAs camera: C12741-03

950 nm - 1700 nm
USB 3.0
EIA
Cooled model

Infrared sensitive InGaAs camera with detection range from 950nm to 1700nm. It supports standard video output (EIA) and USB 3.0.

InGaAs camera: C12741-11

950 nm - 1500 nm
CameraLink
Cooled model

Infrared sensitive InGaAs camera with detection range from 950nm to 1500nm. Low dark current with -70 °C peltier cooling.

InGaAs camera: C14041-10U

950 nm - 1700 nm
USB 3.0
Cooled model

Infrared sensitive InGaAs camera with detection range from 950nm to 1700nm. It supports standard video output USB 3.0.

Hamamatsu TDI cameras

Time-delayed integration (TDI) cameras are a special implementation of CCDs for high speed, low light OEM applications.

TDI camera: C10000-801

Inline

TDI (Time Delay Integration) camera with 2048 horizontal pixel. It realizes high speed and high sensitivity simultaneously and is good for variety of applications including in-line use.

Hamamatsu Board level cameras

Hamamatsu Board-level CMOS cameras

These easy-to-integrate, small form factor, streamlined cameras are ideal for OEM applications that demand both high performance and cost effectiveness.

Scientific CMOS board level camera: C11440-62U

USB 3.0

Board type camera for OEM with the Gen II scientific CMOS sensor.It can be customized upon request.

Scientific CMOS board level camera: C11440-52U30

USB 3.0

Board type camera for OEM with the Gen II scientific CMOS sensor.It can be customized upon request.

Digital CMOS board level camera: C13752-50U

USB 3.0

Board type camera for OEM with the Gen II scientific CMOS sensor.It can be customized upon request.

Digital CMOS board level camera: C13770-50U

USB 3.0

Board type camera for OEM with the Gen II scientific CMOS sensor.It can be customized upon request.

Digital CMOS board level camera: C13949-50U

USB 3.0

Board type camera for OEM with the Gen II scientific CMOS sensor.It can be customized upon request.

Hamamatsu Board-level TDI cameras

Our board-level cameras provide a space- and cost-effective way to integrate TDI performance into an OEM instrument.

TDI board level camera: C10000-A01

Inline

TDI board-level camera is useful for a wide range of imaging applications requiring high speed operation with high sensitivity.

Hamamatsu X-ray cameras

Hamamatsu X-ray line scan cameras

X-ray line scan cameras

X-ray line scan cameras produce high-sensitivity, high-resolution, X-ray transmission images of moving objects transported on a conveyor belt or similar apparatus. These cameras are suitable for inspecting the inside of an object without causing damage, for example, detecting foreign bodies mixed in food, quality of electronic components, and completeness of assemblies and packaging.

X-ray line scan camera: C14960-14C

Thin sample inspection
Thick sample inspection
Camera Link

X-ray line scan camera with detection width of 819.2 mm and line speed from 4 m to 100 m/minute. It is good for nondestructive testing of objects on belt conveyers.

X-ray line scan camera: C14960-16C

Thin sample inspection
Thick sample inspection
Camera Link

X-ray line scan camera with detection width of 819.2 mm and line speed from 4 m to 100 m/minute. It is good for nondestructive testing of objects on belt conveyers.

X-ray line scan camera: C14960-18C

Thin sample inspection
Thick sample inspection
Camera Link

X-ray line scan camera with detection width of 819.2 mm and line speed from 4 m to 100 m/minute. It is good for nondestructive testing of objects on belt conveyers.

X-ray line scan camera: C14300-05U

Thin sample inspection
Thick sample inspection
USB 3.0

X-ray line scan camera with detection width of 256 mm and line speed from 4 m to 200 m/minute. It is good for nondestructive testing of objects on belt conveyers.

X-ray line scan camera: C14300-08U

Thin sample inspection
Thick sample inspection
USB 3.0

X-ray line scan camera with detection width of 409.6 mm and line speed from 4 m to 200 m/minute. It is good for nondestructive testing of objects on belt conveyers.

X-ray line scan camera: C14300-12U

Thin sample inspection
Thick sample inspection
USB 3.0

X-ray line scan camera with detection width of 614.4 mm and line speed from 4 m to 200 m/minute. It is good for nondestructive testing of objects on belt conveyers.

Hamamatsu C-shaped X-ray line scan cameras

C-shaped X-ray line scan cameras meet the demands of tire inspection. As the tire completes one revolution, an image with 3456-pixel horizontal resolution and no gap (<1 pixel) in the entire effective area is generated. High sensitivity and wide dynamic range provide fast and excellent detectability of defects for reliable inspection.

X-ray line scan camera: C12450-27FGC-C

Camera Link

X-ray line scan camera for nondestructive testing to be used for high speed tire inspection and quality control. (Applicable line speeds: 4 m/min to 120 m/min)

X-ray line scan camera: C12450-27FGC-G

Gigabit ethernet

X-ray line scan camera for nondestructive testing to be used for high speed tire inspection and quality control. (Applicable line speeds: 4 m/min to 120 m/min)

Hamamatsu Dual energy X-ray line scan cameras

High-speed, high-resolution dual energy X-ray line scan cameras can be used to effectively differentiate materials in a variety of nondestructive testing applications. By using a selection of scintillator, filter, and gain factor options, it is possible to optimize the camera for X-ray conditions from high-energy to middle- or low-energy ranges. This maximizes object differentiation over a variety of materials.

Dual energy X-ray line scan camera: C11800-08U

DualXTRAX
USB 3.0

C11800-08U is an X-ray line sensor camera that covers the detection of low-density contaminant and thin contaminant. (It has 0.4 mm detection pitch and sensitivity from 25 kV to 160 kV).

Dual energy X-ray line scan camera: C11800-09U

DualXTRAX
USB 3.0

C11800-09U is an X-ray line sensor camera that covers the detection of low-density contaminant and thin contaminant. (It has 0.4 mm detection pitch and sensitivity from 25 kV to 160 kV).

Hamamatsu X-ray TDI cameras

X-ray TDI cameras useful for in-line imaging applications requiring high-speed operation with high sensitivity.

X-ray TDI camera: C12300-121

Ultra high speed readout
Horizontal chassis
Bidirectional scanning operation

Evolutional high speed scanning with TDI technology. Bidirectional scanning operation is supported.

X-ray TDI camera: C12300-323

High speed readout
Horizontal chassis
Bidirectional scanning operation
High energy-compatible model

Evolutional high speed scanning with TDI technology. Bidirectional scanning operation is supported.

X-ray TDI camera: C12300-321

Horizontal chassis
Bidirectional scanning operation

Evolutional high speed scanning with TDI technology. Bidirectional scanning operation is supported.

X-ray TDI camera: C12300-321B

Horizontal chassis
Bidirectional scanning operation
Low energy-compatible model

Evolutional high speed scanning with TDI technology. Bidirectional scanning operation is supported.

X-ray TDI camera: C12300-322

High speed readout
Horizontal chassis
Bidirectional scanning operation

Evolutional high speed scanning with TDI technology. Bidirectional scanning operation is supported.

X-ray TDI camera: C12300-461B

High speed readout
Horizontal chassis
Overlap type
Bidirectional scanning operation
Low energy-compatible model

Evolutional high speed scanning with TDI technology. Bidirectional scanning operation is supported.

X-ray TDI camera: C15400-30-50A

High-contrast images in low energy X-ray
DualXTRAX

C15400-30-50A enables you to obtain high-contrast images in inspecting those materials even with low energy X-ray.

X-ray TDI camera: C10650-221

Horizontal chassis

X-ray TDI camera is useful for in-line applications requiring high-speed operation with high sensitivity. (Standard type)

X-ray TDI camera: C10650-261

Horizontal chassis
Overlap type